型号 功能描述 生产厂家&企业 LOGO 操作
IS42S16100C1-7T

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

IS42S16100C1-7T

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

IS42S16100C1-7T

封装/外壳:50-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PAR 50TSOP II 集成电路(IC) 存储器

ETC

知名厂家

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

封装/外壳:50-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PAR 50TSOP II 集成电路(IC) 存储器

ETC

知名厂家

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

IS42S16100C1-7T产品属性

  • 类型

    描述

  • 型号

    IS42S16100C1-7T

  • 功能描述

    动态随机存取存储器 16M 1Mx16 143Mhz

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2025-8-11 18:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+/25+
14
原装正品现货库存价优
ISSI
23+
SOP
20000
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全
ISSI
06+04+
TSSOP50
564
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
2013+
TSOP-50
18998
专业代理SDRAM1X16
ISSI
24+
TSOP50
6850
只做原装正品现货或订货假一赔十!
ISSI
24+
TSOP50
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ISSI, Integrated Silicon Solu
23+
50-TSOP II
7300
专注配单,只做原装进口现货
ISSI
23+
TSOP50
6000
专业配单保证原装正品假一罚十
ISSI
11+
TSOP54
6952
ISSI
23+
TSOP50
15000
原装现货假一赔十

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