512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：912.12 Kbytes Page：81 Pages

封装/外壳：50-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PAR 50TSOP II 集成电路（IC） 存储器

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：912.12 Kbytes Page：81 Pages

封装/外壳：50-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PAR 50TSOP II 集成电路（IC） 存储器