位置:IS42S16100-10T > IS42S16100-10T详情

IS42S16100-10T中文资料

厂家型号

IS42S16100-10T

文件大小

739.78Kbytes

页面数量

78

功能描述

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

x16 SDRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS42S16100-10T数据手册规格书PDF详情

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

• Clock frequency: 166, 143, 100 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Two banks can be operated simultaneously and independently

• Dual internal bank controlled by A11 (bank select)

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length – (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Auto refresh, self refresh

• 4096 refresh cycles every 128 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Byte controlled by LDQM and UDQM

• Package 400-mil 50-pin TSOP II

IS42S16100-10T产品属性

  • 类型

    描述

  • 型号

    IS42S16100-10T

  • 功能描述

    x16 SDRAM

更新时间:2025-10-6 16:30:00
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一级代理原装现货,特价热卖!
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全新原装、诚信经营、公司现货销售

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