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IS42S16100-7TI中文资料
IS42S16100-7TI数据手册规格书PDF详情
DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
FEATURES
• Clock frequency: 166, 143, 100 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Two banks can be operated simultaneously and independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 4096 refresh cycles every 128 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II
IS42S16100-7TI产品属性
- 类型
描述
- 型号
IS42S16100-7TI
- 制造商
Integrated Silicon Solution Inc
- 功能描述
DRAM Chip SDRAM 16M-Bit 1Mx16 3.3V 50-Pin TSOP-II
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
2015+ |
DIP/SMD |
19889 |
一级代理原装现货,特价热卖! |
|||
ISSI |
24+ |
TSOP50 |
64580 |
原装现货假一赔十 |
|||
ISSI |
25+ |
TSOP |
880000 |
明嘉莱只做原装正品现货 |
|||
ISSI |
2023+ |
TSOP |
50000 |
原装现货 |
|||
ISSI |
23+ |
TSOP |
8000 |
只做原装现货 |
|||
ISSI |
23+ |
TSOP |
7000 |
||||
ISSI |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
|||
ISSI |
三年内 |
1983 |
只做原装正品 |
||||
ISSI |
24+ |
65200 |
|||||
ISSI |
23+ |
TSOP |
4642 |
原厂原装正品 |
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