IRL310价格

参考价格:¥2.8459

型号:IRL3103PBF 品牌:International 备注:这里有IRL310多少钱,2025年最近7天走势,今日出价,今日竞价,IRL310批发/采购报价,IRL310行情走势销售排行榜,IRL310报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ●

IRF

HEXFET Power MOSFET

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ●

IRF

Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A)

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s

IRF

HEXFET Power MOSFET

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s

IRF

Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

IRF

Generation 5 Technology

Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

IRF

FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

Description The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconn

IRF

5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO

DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20

IRF

Generation 5 Technology

IRF

FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)

Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

IRF

FETKY MOSFET & SCHOTTKY RECTIFIER

IRF

Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO

DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20

IRF

Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

Advanced Process Technology

文件:98.67 Kbytes Page:7 Pages

IRF

Advanced Process Technology

文件:98.67 Kbytes Page:7 Pages

IRF

MOSFET N-CH 20V 61A TO-262

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A)

Infineon

英飞凌

MOSFET N-CH 20V 61A D2PAK

Infineon

英飞凌

N-Channel MOSFET Transistor

文件:339.16 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:190.11 Kbytes Page:9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:190.11 Kbytes Page:9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:190.11 Kbytes Page:9 Pages

IRF

isc N-Channel MOSFET Transistor

文件:263.16 Kbytes Page:2 Pages

ISC

无锡固电

ADVANCED PROCESS TECHNOLOGY

文件:656.95 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:656.95 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:656.95 Kbytes Page:11 Pages

IRF

INTERCONNECTS .100??Grid (.018??dia.) Pins SMT Gull Wing Headers & Sockets Single and Double Row

文件:199.28 Kbytes Page:1 Pages

MILL-MAX

SCREW TYPE SERIES

文件:382.28 Kbytes Page:1 Pages

DBLECTRO

Ultra Low Bias Current Varactor Bridge Operational Amplifiers

文件:50.19 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Four wire Kelvin lead measurements

文件:933.59 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Ultra Low Bias Current Varactor Bridge Operational Amplifiers

文件:984.54 Kbytes Page:5 Pages

INTRONICS

IRL310产品属性

  • 类型

    描述

  • 型号

    IRL310

  • 功能描述

    MOSFET N-CH 20V 61A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-12-15 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2016+
TO220
6000
公司只做原装,假一罚十,可开17%增值税发票!
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR/VISHAY
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
IR
2025+
TO252
3685
全新原厂原装产品、公司现货销售
IR
24+
TO-263
4500
只做原装正品现货 欢迎来电查询15919825718
INFINEON/英飞凌
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
IR
25+
TO-263
30000
全新原装现货,价格优势
ir
05+
TO-220
15000
原装进口
IR
25+23+
TO-263
37248
绝对原装正品全新进口深圳现货
IR
22+
SOT263
8000
原装正品支持实单

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