位置:IRL3103S > IRL3103S详情

IRL3103S中文资料

厂家型号

IRL3103S

文件大小

125.18Kbytes

页面数量

10

功能描述

Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)

MOSFET N-CH 30V 64A D2PAK

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IRL3103S数据手册规格书PDF详情

Description

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL3103L) is available for low profile applications.

● Advanced Process Technology

● Surface Mount (IRL3103S)

● Low-profile through-hole (IRL3103L)

● 175°C Operating Temperature

● Fast Switching

● Fully Avalanche Rated

IRL3103S产品属性

  • 类型

    描述

  • 型号

    IRL3103S

  • 功能描述

    MOSFET N-CH 30V 64A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-10-11 19:24:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
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只做原厂渠道 可追溯货源
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柒号只做原装 现货价秒杀全网
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只做原装正品现货或订货假一赔十!
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ir
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原装进口
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全新原装正品,优势热卖