位置：首页 > IC中文资料第4656页 > IRL3102
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRL3102 | Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A) Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ● | IRF |   | |
IRL3102 | Advanced Process Technology 文件：98.67 Kbytes Page：7 Pages | IRF | | |
IRL3102 | Advanced Process Technology | Infineon 英飞凌 | | |
HEXFET Power MOSFET Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ● | IRF | | ||
Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s | IRF | | ||
HEXFET Power MOSFET Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s | IRF | | ||
Advanced Process Technology 文件：98.67 Kbytes Page：7 Pages | IRF | | ||
Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) | Infineon 英飞凌 | | ||
MOSFET N-CH 20V 61A D2PAK | Infineon 英飞凌 | | ||
N-FEMALE BULKHEAD CRIMP CONNECTOR FOR LMR100 ELECTRICAL: IMPEDANCE: 50 OHMS MISCELLANEOUS: COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPECIFICATIONS PS-0031. ALL DIMENSIONS ARE FOR REFERENCE ONLY. REGULATORY COMPLIANCE: CE2011/65/EU(RoHS DIRECTIVE) | L-COM 英飞畅 | | ||
WASHERS AND NUTS [KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
200 V - 1,000 V Three Phase Bridge 2.0 A Forward Current 70 ns - 3000 ns Recovery Time 2.0 A Forward Current 70 ns - 3000 ns Recovery Time | VMI | | ||
T- Subminiature Lamps
| GILWAY | | ||
Large Dome Plugs 文件：135.79 Kbytes Page：1 Pages | Heyco | |
IRL3102产品属性
- 类型
描述
- 型号
IRL3102
- 功能描述
MOSFET N-CH 20V 61A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR英飞凌 |
2010 |
TO-220 |
30 |
全新原装正品现货 |
|||
IR/VISHAY |
24+ |
220 |
60000 |
全新原装现货 |
|||
IR |
24+ |
原厂封装 |
9000 |
原装现货假一罚十 |
|||
IR/VISHAY |
23+ |
220 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
2016+ |
TO220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
IR/VISHAY |
20+ |
220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+/25+ |
1350 |
原装正品现货库存价优 |
||||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
IRL3102芯片相关品牌
IRL3102规格书下载地址
IRL3102参数引脚图相关
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