位置：首页 > IC中文资料第4656页 > IRL3102
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRL3102 | Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A) Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ● | IRF |   | |
IRL3102 | Advanced Process Technology 文件：98.67 Kbytes Page：7 Pages | IRF | | |
IRL3102 | Advanced Process Technology | INFINEON 英飞凌 | | |
HEXFET Power MOSFET Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ● | IRF | | ||
Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s | IRF | | ||
HEXFET Power MOSFET Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s | IRF | | ||
Advanced Process Technology 文件：98.67 Kbytes Page：7 Pages | IRF | | ||
Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) | INFINEON 英飞凌 | | ||
MOSFET N-CH 20V 61A D2PAK | INFINEON 英飞凌 | | ||
Photon Coupled Interrupter Module NPN Transistor Description: The NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The g | NTE | | ||
4-BIT SINGLE CHIP TINY CONTROLLER 文件：769.34 Kbytes Page：22 Pages | NJRC 日本无线 | | ||
4-BIT SINGLE CHIP TINY CONTROLLER 文件：769.34 Kbytes Page：22 Pages | NJRC 日本无线 | | ||
4-BIT SINGLE CHIP TINY CONTROLLER 文件：769.34 Kbytes Page：22 Pages | NJRC 日本无线 | | ||
SMD LED in P-LCC-2 Package 文件：80.75 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
IRL3102产品属性
- 类型
描述
- 型号
IRL3102
- 功能描述
MOSFET N-CH 20V 61A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+/25+ |
1350 |
原装正品现货库存价优 |
||||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
26+ |
TO-263 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IR |
25+23+ |
TO-263 |
37248 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
SOT263 |
8000 |
原装正品支持实单 |
|||
IR |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
25+ |
TO252 |
2789 |
原装优势!绝对公司现货! |
|||
IR |
24+ |
D2-Pak |
8866 |
IRL3102芯片相关品牌
IRL3102规格书下载地址
IRL3102参数引脚图相关
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- IRL3103D1STRR
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- IRL2910STRLPBF
- IRL2910STRLHR
- IRL2910STRL
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- IRL2910PBF
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- IRL2910LPBF
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- IRKV105
- IRKU71
- IRKU41
- IRKU105
- IRKTF82
- IRKTF72
- IRKT92
- IRKT71
- IRKT70
- IRKT570
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