HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

文件：656.95 Kbytes Page：11 Pages

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A??

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15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

文件：197.74 Kbytes Page：3 Pages

15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

文件：197.74 Kbytes Page：3 Pages