型号 功能描述 生产厂家 企业 LOGO 操作
IRL3103S

Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRL3103S

5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO

DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20

IRF

IRL3103S

丝印代码:D2PAK;isc N-Channel MOSFET Transistor

文件:263.16 Kbytes Page:2 Pages

ISC

无锡固电

IRL3103S

采用 D2-Pak 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

INFINEON

英飞凌

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

ADVANCED PROCESS TECHNOLOGY

文件:656.95 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:656.95 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:656.95 Kbytes Page:11 Pages

IRF

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R

FAIRCHILD

仙童半导体

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

FAIRCHILD

仙童半导体

Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A??

文件:164.75 Kbytes Page:10 Pages

IRF

15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

文件:197.74 Kbytes Page:3 Pages

TI

德州仪器

15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

文件:197.74 Kbytes Page:3 Pages

TI

德州仪器

IRL3103S产品属性

  • 类型

    描述

  • 型号

    IRL3103S

  • 功能描述

    MOSFET N-CH 30V 64A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-15 8:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-263
9600
原装现货,优势供应,支持实单!
INTERNATIONAL RECTIFIER
2023+
SMD
800
安罗世纪电子只做原装正品货
IR
22+
SOT-263
8000
原装正品支持实单
IOR
17+
TO-263
6200
100%原装正品现货
IR
2016+
TO-263
3900
只做原装,假一罚十,公司可开17%增值税发票!
IR
24+
原厂封装
65250
支持样品,原装现货,提供技术支持!
IR
25+
TO-263
2400
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
24+
TO-263
8500
郑重承诺只做原装进口现货
INFINE0N
21+
D2PAK (TO-263)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增

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