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IRL3103D1S中文资料
IRL3103D1S数据手册规格书PDF详情
Description
The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
● Co-packaged HEXFET®Power MOSFET and Schottky Diode
● Generation 5 Technology
● Logic Level Gate Drive
● Minimize Circuit Inductance
● Ideal For Synchronous Regulator Application
IRL3103D1S产品属性
- 类型
描述
- 型号
IRL3103D1S
- 功能描述
MOSFET N-CH 30V 64A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
FETKY™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
05+ |
原厂原装 |
5435 |
只做全新原装真实现货供应 |
|||
IR |
1415+ |
TO-263 |
28500 |
全新原装正品,优势热卖 |
|||
IR |
24+ |
TO-263 |
1186 |
||||
IOR |
24+ |
TO-263 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
IR |
23+ |
TO-263 |
5000 |
原装正品,假一罚十 |
|||
IR |
新 |
225 |
全新原装 货期两周 |
||||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
25+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
IRL3103D1S 资料下载更多...
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