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IRG4RC10价格
参考价格:¥6.1247
型号:IRG4RC10KDTRPBF 品牌:International 备注:这里有IRG4RC10多少钱,2024年最近7天走势,今日出价,今日竞价,IRG4RC10批发/采购报价,IRG4RC10行情走势销售排行榜,IRG4RC10报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRG4RC10 | INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRG4RC10 | INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A) Features •Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C •Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRG4RC10 | INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A) Features •Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C •Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A) Features •Extremelylowvoltagedrop1.1V(typ)@2A •S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. •Tightparameterdistribution •IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Extremelylowvoltagedrop1.1V(typ)@2A •S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. •Tightparameterdistribution •IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A) Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage Benefits •Generation | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A) UltraFastCoPackIGBT Features •UltraFast:Optimizedformediumoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMu | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFRED™ultrafast,ultra-soft-recovery | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Generation4IGBTdesignprovidestighterparameterdistributionandhighereffciencythanpreviousgeneration Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 600V 9A 38W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 600V 9A 38W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORShortCircuitRatedUltraFastIGBT 文件:188.38 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件:353.86 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件:353.86 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件:308.4 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件:308.4 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR 文件:654.18 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR 文件:654.18 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
IRG4RC10产品属性
- 类型
描述
- 型号
IRG4RC10
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Infineon Technologies |
22+/23+ |
D-Pak |
7500 |
原装进口公司现货假一赔百 |
|||
MOLEX/莫仕 |
2308+ |
330343 |
一级代理,原装正品,公司现货! |
||||
IR |
22+23+ |
TO-252 |
28697 |
绝对原装正品全新进口深圳现货 |
|||
IR |
23+24 |
TO-252 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
IR |
2310+ |
SOT252 |
3668 |
优势代理渠道,原装现货,可全系列订货 |
|||
Infineon Technologies |
22+ |
DPak |
9000 |
原厂渠道,现货配单 |
|||
IR |
814 |
750 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
||||
IR |
TO-252 |
2998 |
|||||
IR |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
IRG4RC10规格书下载地址
IRG4RC10参数引脚图相关
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- jumper
- jtag接口
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- isd1420
- IRH7130
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- IRH3150
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- IRGPH50
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- IRGBF30
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- IRGBC40
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- IRGB430
- IRGB420
- IRG7PH35UD1-EP
- IRG7PH30K10PBF
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- IRG4RC20FTRPBF
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- IRG4RC10UTRPBF
- IRG4RC10UDTRLP
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- IRG4RC10KDTRPBF
- IRG4PSH71UDPBF
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- IRFZ48Z
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- IRFZ46Z
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- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4RC10数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流(Ic)(最大值)55A 集射极击穿电压(最大值)600V 类型- 不同Vge,Ic时的Vce(on)2.3V@15V,27A 栅极阈值电压-VGE(th)6V@250uA
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原装正品现货热卖中,焕盛达-专注原装用芯服务;
2020-7-17IRKD7104,IRKD71-04,IRKD71-06,IRKD71-08,IRKD71-16,IRKD91-04
IRKD7104,IRKD71-04,IRKD71-06,IRKD71-08,IRKD71-16,IRKD91-04
2020-1-12
DdatasheetPDF页码索引
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