Features

• UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode)

• Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation

• IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-252AA package

• Lead-Free

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing

• Lower losses than MOSFETs condition and Diode losses