IRG4RC10U价格

参考价格:¥6.5543

型号:IRG4RC10UDPBF 品牌:IR 备注:这里有IRG4RC10U多少钱,2024年最近7天走势,今日出价,今日竞价,IRG4RC10U批发/采购报价,IRG4RC10U行情走势销售排行榜,IRG4RC10U报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRG4RC10U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage Benefits •Generation

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A)

Features •Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C •Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

UltraFastCoPackIGBT Features •UltraFast:Optimizedformediumoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMu

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFRED™ultrafast,ultra-soft-recovery

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTOR

Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Generation4IGBTdesignprovidestighterparameterdistributionandhighereffciencythanpreviousgeneration

Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 600V 8.5A 38W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:308.4 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:308.4 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 600V 8.5A 38W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

INSULATEDGATEBIPOLARTRANSISTOR

文件:654.18 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTOR

文件:654.18 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4RC10U产品属性

  • 类型

    描述

  • 型号

    IRG4RC10U

  • 制造商

    International Rectifier

  • 功能描述

    IGBT

更新时间:2024-5-21 8:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
16+
原厂封装
225
原装现货假一罚十
IR
2023+
D-PAK
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
IR
22+
SOT252
100000
代理渠道/只做原装/可含税
IR
24+
TO 247
161256
明嘉莱只做原装正品现货
IR
20+
DPAK
36900
原装优势主营型号-可开原型号增税票
23+
TO-252
30000
专注原装正品现货特价中量大可定
IR
23+
D-Pak
90000
只做原厂渠道价格优势可提供技术支持
IR
21+
9852
只做原装正品现货!或订货假一赔十!
IR
21+
TO-252
30490
原装现货库存
INFINEON/英飞凌
2023+
TO-252
6895
原厂全新正品旗舰店优势现货

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