IRG4RC10U价格

参考价格:¥6.5543

型号:IRG4RC10UDPBF 品牌:IR 备注:这里有IRG4RC10U多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4RC10U批发/采购报价,IRG4RC10U行情走势销售排行榜,IRG4RC10U报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRG4RC10U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

Features • UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package Benefits • Generation

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)

Features • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-252AA package Benefits • Generation 4 IGBTs offer hig

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

UltraFast CoPack IGBT Features • UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM u

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode) • Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode) • Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package • Lead-Free Benefits

IRF

Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation

Features • UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode) • Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package • Lead-Free Benefits

IRF

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 600V 8.5A 38W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:308.4 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:308.4 Kbytes Page:11 Pages

IRF

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 600V 8.5A 38W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

文件:654.18 Kbytes Page:10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:654.18 Kbytes Page:10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-252AA package Benefits • Generation 4 IGBTs offer hig

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations

IRF

IRG4RC10U产品属性

  • 类型

    描述

  • 型号

    IRG4RC10U

  • 制造商

    International Rectifier

  • 功能描述

    IGBT

更新时间:2025-8-7 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
SOT252
100000
代理渠道/只做原装/可含税
INFINEON/英飞凌
25+
TO-252
54648
百分百原装现货 实单必成 欢迎询价
IR
20+
DPAK
36900
原装优势主营型号-可开原型号增税票
IR
24+
TO 247
161256
明嘉莱只做原装正品现货
IR
24+
SOT-1176&NBS
4500
只做原装正品现货 欢迎来电查询15919825718
IR
24+
TO-252
501025
免费送样原盒原包现货一手渠道联系
ir
24+
N/A
6980
原装现货,可开13%税票
23+
TO-252
30000
专注原装正品现货特价中量大可定
IR
00+~03+
原厂原装
3000
自己公司全新库存绝对有货
IR
24+
TO-252
90000
一级代理商进口原装现货、价格合理

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