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位置：首页 > IC中文资料第2145页 > IRFR4105

IRFR4105价格

参考价格：￥1.1307

型号：IRFR4105PBF 品牌：IR 备注：这里有IRFR4105多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR4105批发/采购报价，IRFR4105行情走势销售排行榜，IRFR4105报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFR4105

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFR4105

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFR4105

55V N-Channel MOSFET

Description Ultra Low On-Resistance Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 50V ID = 27A (VGS = 10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRFR4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A??

文件：144.58 Kbytes Page：10 Pages

IRF

IRFR4105PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFR4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFR4105TR

55V N-Channel MOSFET

Description Ultra Low On-Resistance Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 50V ID = 27A (VGS = 10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRFR4105TRL

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFR4105TRLPBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105TRPBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105Z

Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

IRF

IRFR4105Z

N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤24.5mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFR4105Z

Advanced Process Technology

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFR4105ZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFR4105ZTRL

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

IRFR4105PBF

Ultra Low On-Resistance

文件：244.71 Kbytes Page：11 Pages

IRF

IRFR4105PBF_15

Ultra Low On-Resistance

文件：244.71 Kbytes Page：11 Pages

IRF

IRFR4105ZLPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZPBF_15

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZTRPBF

N-Channel 6 0-V (D-S) MOSFET

文件：988.65 Kbytes Page：6 Pages

VBSEMI

微碧半导体

AN4105

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

AUIRFR4105

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

4105

Relampable Socket

文件：90.94 Kbytes Page：1 Pages

VCC

Visual Communications Company

ACTR4105

true one-port, surface-acoustic-wave (SAW) resonator

文件：58.89 Kbytes Page：3 Pages

ACT

Advanced Crystal Technology

AUIRFR4105

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

IRFR4105产品属性

  • 类型

    描述

  • 型号

    IRFR4105

  • 功能描述

    MOSFET N-CH 55V 27A DPAK

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRFR4105供应商更多...

更新时间：2025-8-9 9:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
IRFR4105
IR
25+
NA
880000
明嘉莱只做原装正品现货
询价
瀚佳科技(深圳)有限公司
IRFR4105ZTRPBF
IR
24+
TO-252
9800
一级代理/全新原装现货/长期供应!
询价
深圳市创新迹电子有限公司
IRFR4105ZPBFMOS(场效应管)
IR
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
深圳市星宇佳科技有限公司
IRFR4105ZTRPBF
IR
20+
TO-252
74371
深圳原装进口无铅现货正规报关
询价
深圳市坤融电子科技有限公司
IRFR4105ZTRPBF
IR
24+
TO-252
3400
只做原厂渠道 可追溯货源
询价
深圳市科恒伟业电子有限公司
IRFR4105ZTRPBF
INFINEON/IR
21+
TO252
9800
只做原装正品假一赔十!正规渠道订货!
询价
深圳市中联芯电子有限公司
IRFR4105TRPBF
IR/INFINEON
24+
TO-252
5715
只做原装 有挂有货 假一罚十
询价
深圳市星佑电子有限公司
IRFR4105
IR
06+
TO-252
15000
原装
询价
深圳市宏世佳电子科技有限公司
IRFR4105
IR
2025+
TO-252-2
5425
全新原厂原装产品、公司现货销售
询价
深圳市高捷芯城科技有限公司
IRFR4105ZPBF
Infineon(英飞凌)
24+
TO-252
7793
支持大陆交货,美金交易。原装现货库存。
询价

IRFR4105芯片相关品牌

IRFR4105规格书下载地址

IRFR4105参数引脚图相关

IRFR4105数据表相关新闻

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