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位置：首页 > IC中文资料第2145页 > IRFR4105

IRFR4105价格

参考价格：￥1.1307

型号：IRFR4105PBF 品牌：IR 备注：这里有IRFR4105多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR4105批发/采购报价，IRFR4105行情走势销售排行榜，IRFR4105报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR4105

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFR4105

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFR4105

55V N-Channel MOSFET

Description Ultra Low On-Resistance Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 50V ID = 27A (VGS = 10V) RDS(ON)

UMW

友台半导体

IRFR4105

采用 D-Pak 封装的 55V 单 N 通道 IR MOSFET

Infineon

英飞凌

IRFR4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A??

文件：144.58 Kbytes Page：10 Pages

IRF

IRFR4105PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFR4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFR4105TR

55V N-Channel MOSFET

Description Ultra Low On-Resistance Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 50V ID = 27A (VGS = 10V) RDS(ON)

UMW

友台半导体

IRFR4105TRL

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

IRFR4105TRLPBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105TRPBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRFR4105Z

Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

IRF

IRFR4105Z

Advanced Process Technology

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

IRFR4105Z

N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤24.5mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFR4105ZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFR4105ZTRL

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

IRFR4105PBF

Ultra Low On-Resistance

文件：244.71 Kbytes Page：11 Pages

IRF

IRFR4105PBF_15

Ultra Low On-Resistance

文件：244.71 Kbytes Page：11 Pages

IRF

IRFR4105Z

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Infineon

英飞凌

IRFR4105ZLPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZPBF_15

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZTRPBF

N-Channel 6 0-V (D-S) MOSFET

文件：988.65 Kbytes Page：6 Pages

VBSEMI

微碧半导体

AN4105

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

AUIRFR4105

Advanced Planar Technology

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

Infineon

英飞凌

AUIRFR4105

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

ACTR4105

true one-port, surface-acoustic-wave (SAW) resonator

文件：58.89 Kbytes Page：3 Pages

ACT

AUIRFR4105

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

IRFR4105产品属性

  • 类型

    描述

  • 型号

    IRFR4105

  • 功能描述

    MOSFET N-CH 55V 27A DPAK

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRFR4105供应商更多...

更新时间：2025-9-24 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
京海半导体(深圳)有限公司
IRFR4105ZPBF
IR
21+
TO-252
20000
原装现货假一罚十
询价
深圳市欧立现代科技有限公司
IRFR4105
ir
24+
N/A
6980
原装现货,可开13%税票
询价
深圳市金嘉锐电子有限公司
IRFR4105Z
IR
2025+
TO-252
32560
原装优势绝对有货
询价
瀚佳科技(深圳)有限公司
IRFR4105ZTRPBF
IR
24+
TO-252
9800
一级代理/全新原装现货/长期供应!
询价
深圳市蓝山航业科技有限公司
IRFR4105
ir
24+
500000
行业低价,代理渠道
询价
深圳市晨豪科技有限公司
IRFR4105
INFINEON/英飞凌
23+
TO-252
89630
当天发货全新原装现货
询价
深圳市斌腾达科技有限公司
IRFR4105
INFINE0N
21+
DPAK (TO-252)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
询价
深圳市航润创能电子集团有限公司
IRFR4105TRPBF
INFINEON/英飞凌
20+
TO-252
8000
进口原装假一赔十支持含税
询价
深圳市金睿扬电子科技有限公司
IRFR4105ZTRPBF
IR
20+21+
TO252
58550
金睿扬电子,只做全新原装正品可订货欢迎咨询QQ微信
询价
深圳深宇韬电子科技有限公司
IRFR4105ZTRPBF
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价

IRFR4105芯片相关品牌

IRFR4105规格书下载地址

IRFR4105参数引脚图相关

IRFR4105数据表相关新闻

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