IRFR4105ZPBF价格

参考价格:¥1.9260

型号:IRFR4105ZPBF 品牌:INTERNATIONAL 备注:这里有IRFR4105ZPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR4105ZPBF批发/采购报价,IRFR4105ZPBF行情走势销售排行榜,IRFR4105ZPBF报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFR4105ZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFR4105ZPBF

Advanced Process Technology

文件:335.84 Kbytes Page:11 Pages

IRF

IRFR4105ZPBF

Advanced Process Technology

文件:335.84 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:335.84 Kbytes Page:11 Pages

IRF

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

Relampable Socket

文件:90.94 Kbytes Page:1 Pages

VCC

Visual Communications Company

true one-port, surface-acoustic-wave (SAW) resonator

文件:58.89 Kbytes Page:3 Pages

ACT

Advanced Crystal Technology

Advanced Planar Technology Low On-Resistance

文件:244.23 Kbytes Page:12 Pages

IRF

IRFR4105ZPBF产品属性

  • 类型

    描述

  • 型号

    IRFR4105ZPBF

  • 功能描述

    MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-11 23:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
20+
DPAK
36900
原装优势主营型号-可开原型号增税票
IR
24+
NA/
4807
优势代理渠道,原装正品,可全系列订货开增值税票
IR
2023+
TO-252
50000
原装现货
IR
17+
TO-252
1375
IR
23+
TO-252
30000
全新原装现货,价格优势
INFINEON/英飞凌
25+
BGA
880000
明嘉莱只做原装正品现货
IR
24+
SOT-1370&NBS
4500
只做原装正品现货 欢迎来电查询15919825718
IR
25+23+
TO-252
27188
绝对原装正品全新进口深圳现货
NK/南科功率
2025+
TO-252-2
986966
国产
IR
22+
TO-252
8000
原装正品支持实单

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