您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第8543页 > IRFR4105Z

IRFR4105Z价格

参考价格：￥1.9260

型号：IRFR4105ZPBF 品牌：INTERNATIONAL 备注：这里有IRFR4105Z多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR4105Z批发/采购报价，IRFR4105Z行情走势销售排行榜，IRFR4105Z报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFR4105Z

Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

IRF

IRFR4105Z

Advanced Process Technology

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

IRFR4105Z

N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤24.5mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFR4105ZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch

KERSEMI

IRFR4105ZTRL

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

IRFR4105ZLPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZPBF

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZPBF_15

Advanced Process Technology

文件：335.84 Kbytes Page：11 Pages

IRF

IRFR4105ZTRPBF

N-Channel 6 0-V (D-S) MOSFET

文件：988.65 Kbytes Page：6 Pages

VBSEMI

微碧半导体

AN4105

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

AUIRFR4105

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

4105

Relampable Socket

文件：90.94 Kbytes Page：1 Pages

VCC

Visual Communications Company

ACTR4105

true one-port, surface-acoustic-wave (SAW) resonator

文件：58.89 Kbytes Page：3 Pages

ACT

Advanced Crystal Technology

AUIRFR4105

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

IRFR4105Z产品属性

  • 类型

    描述

  • 型号

    IRFR4105Z

  • 功能描述

    MOSFET N-CH 55V 30A DPAK

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRFR4105Z供应商更多...

更新时间：2025-8-8 8:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市晨豪科技有限公司
IRFR4105ZTRPBF
INFINEON/英飞凌
23+
TO-252
89630
当天发货全新原装现货
询价
深圳市明嘉莱科技有限公司
IRFR4105ZTRPBF
INFINEON/IR
25+
TO252
860000
明嘉莱只做原装正品现货
询价
深圳市东来宝电子科技有限公司
IRFR4105ZTRPBFMOSFET或IGBT开关IC
IR
24+
TO252
47186
郑重承诺只做原装进口现货
询价
深圳市航润创能电子集团有限公司
IRFR4105ZTRPBF
INFINEON/IR
21+
TO252
2900
原装现货假一赔十
询价
深圳市力仕科电子科技有限公司
IRFR4105ZTRPBF
Infineon/英飞凌
25
DPAK
6000
原装正品
询价
深圳市金睿扬电子科技有限公司
IRFR4105ZTRPBF
IR
20+21+
TO252
58550
金睿扬电子,只做全新原装正品可订货欢迎咨询QQ微信
询价
深圳市斌腾达科技有限公司
IRFR4105Z
INFINE0N
21+
DPAK (TO-252)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
询价
深圳深宇韬电子科技有限公司
IRFR4105ZTRPBF
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价
深圳科宇泰科技有限公司
IRFR4105ZTRPBF
INFINEON
21+
标准封装
150
保证原装正品,需要联系张小姐 13544103396 微信同号
询价
深圳市亿智腾科技有限公司
IRFR4105ZTRLPBF
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价

IRFR4105Z芯片相关品牌

IRFR4105Z规格书下载地址

IRFR4105Z参数引脚图相关

IRFR4105Z数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示