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IRFR4105TR价格
参考价格：￥2.6268
型号：IRFR4105TRLPBF 品牌：IR 备注：这里有IRFR4105TR多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR4105TR批发/采购报价，IRFR4105TR行情走势销售排行榜，IRFR4105TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR4105TR | 55V N-Channel MOSFET Description Ultra Low On-Resistance Fast Switching Fully Avalanche Rated Lead-Free VDS(V) = 50V ID = 27A (VGS = 10V) RDS(ON) | UMW 友台半导体 |   | |
Advanced Planar Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | KERSEMI | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | IRF | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | IRF | | ||
Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo | Fairchild 仙童半导体 | | ||
Advanced Planar Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | KERSEMI | | ||
Advanced Planar Technology AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design | Infineon 英飞凌 | | ||
true one-port, surface-acoustic-wave (SAW) resonator 文件：58.89 Kbytes Page：3 Pages | ACT | | ||
Advanced Planar Technology Low On-Resistance 文件：244.23 Kbytes Page：12 Pages | IRF | |
IRFR4105TR产品属性
- 类型
描述
- 型号
IRFR4105TR
- 功能描述
MOSFET N-CH 55V 27A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR/INFINEON |
24+ |
TO-252 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IR |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
24+ |
TO-252 |
37765 |
||||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
INTERNATIONA |
05+ |
原厂原装 |
5041 |
只做全新原装真实现货供应 |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
|||
INFINEON TECHNOLOGIES |
24+ |
N/A |
30526 |
原装原装原装 |
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2018-12-28
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