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IRFR4105中文资料
IRFR4105数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR4105)
● Straight Lead (IRFU4105)
● Fast Switching
● Fully Avalanche Rated
IRFR4105产品属性
- 类型
描述
- 型号
IRFR4105
- 功能描述
MOSFET N-CH 55V 27A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-252 |
20000 |
原装现货假一罚十 |
|||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
45000 |
IR全新现货IRFR4105即刻询购立享优惠#长期有排单订 |
|||
IR |
24+ |
TO-252 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
IR |
20+21+ |
TO252 |
58550 |
金睿扬电子,只做全新原装正品可订货欢迎咨询QQ微信 |
|||
INFINEON/IR |
20+ |
2000 |
PG-TO252-3 (DPAK) |
||||
IR |
22+ |
原厂封装 |
9450 |
原装正品,实单请联系 |
|||
IR |
17+ |
D-Pak |
31518 |
原装正品 可含税交易 |
|||
IBFINEON |
2320+ |
TO-252-3 |
5000 |
只做原装,特价清货! |
|||
INFINEON/IR |
25+ |
TO252 |
33500 |
全新进口原装现货,假一罚十 |
IRFR4105ZTRPBF 价格
参考价格:¥1.9356
IRFR4105 资料下载更多...
IRFR4105 芯片相关型号
- 2-178288-3
- 4N37-X000
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KERSEMI相关芯片制造商
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