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IRFR4105TRL中文资料
IRFR4105TRL数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR4105)
● Straight Lead (IRFU4105)
● Fast Switching
● Fully Avalanche Rated
IRFR4105TRL产品属性
- 类型
描述
- 型号
IRFR4105TRL
- 功能描述
MOSFET N-CH 55V 27A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
37765 |
||||
INTERNATIONA |
05+ |
原厂原装 |
7216 |
只做全新原装真实现货供应 |
|||
IR |
24+ |
TO-252 |
5000 |
全现原装公司现货 |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
InternationalRectifier |
2022+ |
9000 |
全新原装 货期两周 |
||||
Infineon Technologies |
21+ |
D-Pak |
3000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon(英飞凌) |
2447 |
DPAK |
115000 |
3000个/卷一级代理专营品牌!原装正品,优势现货,长 |
|||
INFINEON |
25+ |
TO-252 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
Infineon/英飞凌 |
25+ |
DPAK |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
24+ |
DPAK |
6000 |
全新原装深圳仓库现货有单必成 |
IRFR4105TRLPBF 价格
参考价格：￥2.6268
IRFR4105TRL 资料下载更多...
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KERSEMI相关芯片制造商
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