位置:首页 > IC中文资料第2888页 > AUIRFR4105
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
AUIRFR4105 | AdvancedPlanarTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | ||
AUIRFR4105 | AdvancedPlanarTechnology AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
AUIRFR4105 | AdvancedPlanarTechnologyLowOn-Resistance 文件:244.23 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive | KERSEMI Kersemi Electronic Co., Ltd. | |||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedPlanarTechnologyLowOn-Resistance 文件:244.23 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedPlanarTechnologyLowOn-Resistance 文件:244.23 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedPlanarTechnologyLowOn-Resistance 文件:244.23 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedPlanarTechnologyLowOn-Resistance 文件:244.23 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
RelampableSocket 文件:90.94 Kbytes Page:1 Pages | VCC Visual Communications Company | |||
trueone-port,surface-acoustic-wave(SAW)resonator 文件:58.89 Kbytes Page:3 Pages | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 |
AUIRFR4105产品属性
- 类型
描述
- 型号
AUIRFR4105
- 功能描述
MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICROCHI |
2020+ |
TO-252 |
350000 |
100%进口原装正品公司现货库存 |
|||
Infineon Technologies |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
|||
Infineon(英飞凌) |
23+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
23+ |
NA/ |
33760 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
2022+ |
TO-252 |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
|||
VBSEMI/台湾微碧 |
21+ |
TO-252 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
Infineon Technologies |
21+ |
D-Pak |
21000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
IR |
TO-252 |
68900 |
原包原标签100%进口原装常备现货! |
||||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
AUIRFR4105规格书下载地址
AUIRFR4105参数引脚图相关
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AUIRFR4105数据表相关新闻
AUIRF6215STRL
原装代理
2022-10-24AUIRFS4127
原装正品现货
2022-6-29AUIRS2181STR
AUIRS2181STR
2022-3-4AUIRS2336STR
厂商名称Infineon 包装说明SOP,SOP28,.4 ReachComplianceCodecompliant ECCN代码EAR99 FactoryLeadTime26weeks SamacsysDescriptionGateDrivers3-PhaseBridgeDRVR600V200mA275ns 内置保护TRANSIENT;_OVERCURRENT;_THERMAL;_UNDERVOLTAGE 接口集成电路类型BUFFERORINVERTERBASEDMOSFET
2021-10-16AUIRFN8459PBF
AUIRFN8459PBF,全新原装当天发货或门市自取0755-82732291.
2020-1-11AUIRFN8459
AUIRFN8459,全新原装当天发货或门市自取0755-82732291.
2020-1-11
DdatasheetPDF页码索引
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