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位置：首页 > IC中文资料第2888页 > AUIRFR4105

型号 功能描述 生产厂家 企业 LOGO 操作
AUIRFR4105

Advanced Planar Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

KERSEMI

AUIRFR4105

Advanced Planar Technology

AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design

Infineon

英飞凌

AUIRFR4105

HEXFET® Power MOSFET

Infineon

英飞凌

AUIRFR4105

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

AUIRFR4105Z

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUIRFR4105Z

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

KERSEMI

AUIRFR4105Z

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

Infineon

英飞凌

AUIRFR4105ZTR

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUIRFR4105ZTRL

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUIRFR4105ZTRL

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

Infineon

英飞凌

AUIRFR4105ZTRR

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUIRFR4105_11

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

AUIRFR4105TR

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

AUIRFR4105TRL

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

AUIRFR4105TRR

Advanced Planar Technology Low On-Resistance

文件：244.23 Kbytes Page：12 Pages

IRF

AUIRFR4105Z

汽车Q101 55V单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Infineon

英飞凌

AN4105

Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter

Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo

Fairchild

仙童半导体

ACTR4105

true one-port, surface-acoustic-wave (SAW) resonator

文件：58.89 Kbytes Page：3 Pages

ACT

AUIRFR4105产品属性

  • 类型

    描述

  • 型号

    AUIRFR4105

  • 功能描述

    MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

AUIRFR4105供应商更多...

更新时间：2025-11-18 10:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市南科功率半导体有限公司
AUIRFR4105
NK/南科功率
2025+
TO-252
986966
国产
询价
深圳市威尔健半导体有限公司
AUIRFR4105
IR
23+
TO-252
50000
全新原装正品现货,支持订货
询价
深圳市宏捷佳电子科技有限公司
AUIRFR4105
IR
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
深圳市河锋鑫科技有限公司
AUIRFR4105
Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
询价
深圳市煦洪科技有限公司
AUIRFR4105TRL
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源！
询价
深圳市亿智腾科技有限公司
AUIRFR4105
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
深圳市高捷芯城科技有限公司
AUIRFR4105
Infineon(英飞凌)
24+
TO-252
7793
支持大陆交货,美金交易。原装现货库存。
询价
深圳市博中泰实业有限公司
AUIRFR4105
IR
24+
TO-252
60000
询价
天津市博通航睿技术有限公司
AUIRFR4105
Infineon Technologies
23+
原装
7000
询价
深圳市斌腾达科技有限公司
AUIRFR4105TRL
Infineon Technologies
21+
D-Pak
21000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价

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