位置:首页 > IC中文资料第2888页 > AUIRFR4105
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
AUIRFR4105 | Advanced Planar Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | KERSEMI | ||
AUIRFR4105 | Advanced Planar Technology AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design | Infineon 英飞凌 | ||
AUIRFR4105 | Advanced Planar Technology Low On-Resistance 文件:244.23 Kbytes Page:12 Pages | IRF | ||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive | KERSEMI | |||
AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | Infineon 英飞凌 | |||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | Infineon 英飞凌 | |||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
Advanced Planar Technology Low On-Resistance 文件:244.23 Kbytes Page:12 Pages | IRF | |||
Advanced Planar Technology Low On-Resistance 文件:244.23 Kbytes Page:12 Pages | IRF | |||
Advanced Planar Technology Low On-Resistance 文件:244.23 Kbytes Page:12 Pages | IRF | |||
Advanced Planar Technology Low On-Resistance 文件:244.23 Kbytes Page:12 Pages | IRF | |||
Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch (FPS) in a Flyback Converter Introduction Flyback switched mode power supplies (SMPS) are among the most frequently used power circuits in household and consumer electronics. The basic function of an SMPS is to supply regulated power to the load on the secondary, or output side. An SMPS typically incorporates a power transfo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
true one-port, surface-acoustic-wave (SAW) resonator 文件:58.89 Kbytes Page:3 Pages | ACT Advanced Crystal Technology |
AUIRFR4105产品属性
- 类型
描述
- 型号
AUIRFR4105
- 功能描述
MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
21+ |
D-Pak |
21000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
IR |
24+ |
TO-252 |
500810 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IR |
24+ |
NA/ |
33760 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VBSEMI/台湾微碧 |
24+ |
TO-252 |
47186 |
郑重承诺只做原装进口现货 |
|||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
AUIRFR4105芯片相关品牌
AUIRFR4105规格书下载地址
AUIRFR4105参数引脚图相关
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AUIRFR4105数据表相关新闻
AUIRF6215STRL
原装代理
2022-10-24AUIRFS4127
原装正品现货
2022-6-29AUIRS2181STR
AUIRS2181STR
2022-3-4AUIRS2336STR
厂商名称 Infineon 包装说明 SOP, SOP28,.4 Reach Compliance Code compliant ECCN代码 EAR99 Factory Lead Time 26 weeks Samacsys Description Gate Drivers 3-Phase Bridge DRVR 600V 200mA 275ns 内置保护 TRANSIENT;_OVER CURRENT;_THERMAL;_UNDER VOLTAGE 接口集成电路类型 BUFFER OR INVERTER BASED MOSFET
2021-10-16AUIRFN8459PBF
AUIRFN8459PBF,全新原装当天发货或门市自取0755-82732291.
2020-1-11AUIRFN8459
AUIRFN8459 ,全新原装当天发货或门市自取0755-82732291.
2020-1-11
DdatasheetPDF页码索引
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