IRF730价格

参考价格:¥12.0790

型号:IRF730 品牌:Vishay 备注:这里有IRF730多少钱,2024年最近7天走势,今日出价,今日竞价,IRF730批发/采购报价,IRF730行情走势销售排行榜,IRF730报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF730

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF730issuppliedin

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRF730

N-CHANNEL400V-0.75ohm-5.5A-TO-220PowerMESH]MOSFET

Description ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. Generalfeatures

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF730

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF730

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF730

SMPSMOSFET

SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF730

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

SUNTACSuntac Electronic Corp.

Suntac Electronic Corp.

SUNTAC
IRF730

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
IRF730

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

Vishay
IRF730

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER
IRF730

N-channelmosfettransistor

Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A •1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF730

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF730areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. FEATURES ●RDS(ON)=1.00Ω@VGS=10V ●Ultralowgatec

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI
IRF730

6.0A400VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

FCI

Amphenol ICC

FCI
IRF730

6.0A,400V,1.0廓N-CHANNELPOWERMOSFET

DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov

FS

First Silicon Co., Ltd

FS
IRF730

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay
IRF730

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRF730

HighPowerFactor/LowTHD

文件:355.59 Kbytes Page:16 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF730

PowerMOSFET

文件:277.08 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET(Vdss=20V,Rds(on)=0.050ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

GenerationVTechnology

Features VDS(V)=20V RDS(ON)

UMWUMW

友台友台半导体

UMW

DualN-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

DualN-ChannelMOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic

UMWUMW

友台友台半导体

UMW

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=30V,Rds(on)=0.050ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET(VDSS=30V,RDS(on)=0.050廓)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

DualN-ChannelMOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic

UMWUMW

友台友台半导体

UMW

DualN-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

DualP-ChannelMOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free Features VDS(V)=-20V RDS(ON)140m(VGS=-2.7V) RDS(ON)90m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhan

UMWUMW

友台友台半导体

UMW

HEXFETPowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

DualP-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

DualP-ChannelMOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free Features VDS(V)=-20V RDS(ON)140m(VGS=-2.7V) RDS(ON)90m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhan

UMWUMW

友台友台半导体

UMW

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFETsarea150°Cj

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

DualP-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

DualP-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

GenerationVTechnologyUltra

GenerationVTechnologyUltra LowOn-Resistance DualNandPChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free 100 Features VDS(V)=20V RDS(ON)53m(VGS=4.5V) RDS(ON)70m(VGS=2.7V) VDS(V)=-20V RDS(ON)m(VGS=-4.5V) RDS(ON)140m(VGS=-2.7V) N-

UMWUMW

友台友台半导体

UMW

PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFETsarea150°Cj

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

GenerationVTechnologyUltra

GenerationVTechnologyUltra LowOn-Resistance DualNandPChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free 100 Features VDS(V)=20V RDS(ON)53m(VGS=4.5V) RDS(ON)70m(VGS=2.7V) VDS(V)=-20V RDS(ON)m(VGS=-4.5V) RDS(ON)140m(VGS=-2.7V) N-

UMWUMW

友台友台半导体

UMW

DualNPChannelMOSFET

Industry-standardpinoutSO-8Package CompatiblewithExistingSurfaceMountTechniques VDS(V)=30V RDS(ON)70m(VGS=2.7V) RDS(ON)50m(VGS=4.5V) VDS(V)=-30V RDS(ON)100m(VGS=4.5V) RDS(ON)140m(VGS=2.7V) Features   N-Ch: P-Ch:

UMWUMW

友台友台半导体

UMW

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknown

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknown

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

DualNPChannelMOSFET

Industry-standardpinoutSO-8Package CompatiblewithExistingSurfaceMountTechniques VDS(V)=30V RDS(ON)70m(VGS=2.7V) RDS(ON)50m(VGS=4.5V) VDS(V)=-30V RDS(ON)100m(VGS=4.5V) RDS(ON)140m(VGS=2.7V) Features   N-Ch: P-Ch:

UMWUMW

友台友台半导体

UMW

N-andP-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

PowerMOSFET

FEATURES •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified(SeeAN1001) •Lead(Pb)-freeAvailable APPLICATIONS •Swi

VishayVishay Siliconix

威世科技

Vishay

SMPSMOSFET

SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SMPSMOSFET

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalanch

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET(SMPSMOSFET)

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching •Lead-Free Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheV

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified(SeeAN1001) •Lead(Pb)-freeAvailable APPLICATIONS •Swi

VishayVishay Siliconix

威世科技

Vishay

IRF730产品属性

  • 类型

    描述

  • 型号

    IRF730

  • 功能描述

    MOSFET N-Chan 400V 5.5 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-3-29 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
三年内
1983
纳立只做原装正品13590203865
IR台产
20+
TO-220
368
样品可出,原装现货
21+
TO-220AB
900000
原装正品现货/订货 价格优惠
IR
2019
TO-220
4804
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
22+
TO-220
100000
代理渠道/只做原装/可含税
INFINEON/IR
1907+
NA
4000
20年老字号,原装优势长期供货
IR
21+
SOP8
1372
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查
IOR
23+
SOP8
20000
原厂原装正品现货
IR
22+
SOP-8
2960
诚信交易大量库存现货

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  • TTELEC
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IRF730数据表相关新闻