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IRF730价格
参考价格:¥12.0790
型号:IRF730 品牌:Vishay 备注:这里有IRF730多少钱,2024年最近7天走势,今日出价,今日竞价,IRF730批发/采购报价,IRF730行情走势销售排行榜,IRF730报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF730 | PowerMOStransistorAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF730issuppliedin | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
IRF730 | N-CHANNEL400V-0.75ohm-5.5A-TO-220PowerMESH]MOSFET Description ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. Generalfeatures | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
IRF730 | N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF730 | 400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF730 | 5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF730 | SMPSMOSFET SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF730 | POWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. | ||
IRF730 | TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap | DCCOMDc Components 直流元件直流元件有限公司 | ||
IRF730 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | ||
IRF730 | N-CHANNELENHANCEMENTMODEPOWERMOSFET Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | ||
IRF730 | N-channelmosfettransistor Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A •1.gate2.drain3.source | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF730 | N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF730 | N-ChannelPowerMOSFET DESCRIPTION TheNellIRF730areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. FEATURES ●RDS(ON)=1.00Ω@VGS=10V ●Ultralowgatec | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | ||
IRF730 | 6.0A400VNCHANNELPOWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp | FCI Amphenol ICC | ||
IRF730 | 6.0A,400V,1.0廓N-CHANNELPOWERMOSFET DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov | FS First Silicon Co., Ltd | ||
IRF730 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | ||
IRF730 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
IRF730 | HighPowerFactor/LowTHD 文件:355.59 Kbytes Page:16 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF730 | PowerMOSFET 文件:277.08 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET(Vdss=20V,Rds(on)=0.050ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
GenerationVTechnology Features VDS(V)=20V RDS(ON) | UMWUMW 友台友台半导体 | |||
DualN-Channel20-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
DualN-ChannelMOSFET GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic | UMWUMW 友台友台半导体 | |||
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=30V,Rds(on)=0.050ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET(VDSS=30V,RDS(on)=0.050廓) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DualN-ChannelMOSFET GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic | UMWUMW 友台友台半导体 | |||
DualN-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DualP-ChannelMOSFET GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free Features VDS(V)=-20V RDS(ON)140m(VGS=-2.7V) RDS(ON)90m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhan | UMWUMW 友台友台半导体 | |||
HEXFETPowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DualP-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DualP-ChannelMOSFET GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free Features VDS(V)=-20V RDS(ON)140m(VGS=-2.7V) RDS(ON)90m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhan | UMWUMW 友台友台半导体 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFETsarea150°Cj | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DualP-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
DualP-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
GenerationVTechnologyUltra GenerationVTechnologyUltra LowOn-Resistance DualNandPChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free 100 Features VDS(V)=20V RDS(ON)53m(VGS=4.5V) RDS(ON)70m(VGS=2.7V) VDS(V)=-20V RDS(ON)m(VGS=-4.5V) RDS(ON)140m(VGS=-2.7V) N- | UMWUMW 友台友台半导体 | |||
PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPOWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFETsarea150°Cj | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
GenerationVTechnologyUltra GenerationVTechnologyUltra LowOn-Resistance DualNandPChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free 100 Features VDS(V)=20V RDS(ON)53m(VGS=4.5V) RDS(ON)70m(VGS=2.7V) VDS(V)=-20V RDS(ON)m(VGS=-4.5V) RDS(ON)140m(VGS=-2.7V) N- | UMWUMW 友台友台半导体 | |||
DualNPChannelMOSFET Industry-standardpinoutSO-8Package CompatiblewithExistingSurfaceMountTechniques VDS(V)=30V RDS(ON)70m(VGS=2.7V) RDS(ON)50m(VGS=4.5V) VDS(V)=-30V RDS(ON)100m(VGS=4.5V) RDS(ON)140m(VGS=2.7V) Features N-Ch: P-Ch: | UMWUMW 友台友台半导体 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknown | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknown | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DualNPChannelMOSFET Industry-standardpinoutSO-8Package CompatiblewithExistingSurfaceMountTechniques VDS(V)=30V RDS(ON)70m(VGS=2.7V) RDS(ON)50m(VGS=4.5V) VDS(V)=-30V RDS(ON)100m(VGS=4.5V) RDS(ON)140m(VGS=2.7V) Features N-Ch: P-Ch: | UMWUMW 友台友台半导体 | |||
N-andP-Channel30V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified(SeeAN1001) •Lead(Pb)-freeAvailable APPLICATIONS •Swi | VishayVishay Siliconix 威世科技 | |||
SMPSMOSFET SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
SMPSMOSFET Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalanch | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | VishayVishay Siliconix 威世科技 | |||
HEXFETPowerMOSFET(SMPSMOSFET) Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching •Lead-Free Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheV | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified(SeeAN1001) •Lead(Pb)-freeAvailable APPLICATIONS •Swi | VishayVishay Siliconix 威世科技 |
IRF730产品属性
- 类型
描述
- 型号
IRF730
- 功能描述
MOSFET N-Chan 400V 5.5 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
IR台产 |
20+ |
TO-220 |
368 |
样品可出,原装现货 |
|||
21+ |
TO-220AB |
900000 |
原装正品现货/订货 价格优惠 |
||||
IR |
2019 |
TO-220 |
4804 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/IR |
1907+ |
NA |
4000 |
20年老字号,原装优势长期供货 |
|||
IR |
21+ |
SOP8 |
1372 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
|||
IOR |
23+ |
SOP8 |
20000 |
原厂原装正品现货 |
|||
IR |
22+ |
SOP-8 |
2960 |
诚信交易大量库存现货 |
IRF730规格书下载地址
IRF730参数引脚图相关
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- IRF730B
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- IRF7309TRPBF-CUTTAPE
- IRF7309TRPBF
- IRF7309PBF
- IRF7309
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- IRF7307PBF
- IRF7307
- IRF7306TRPBF
- IRF7306TR
- IRF7306PBF
- IRF7306
- IRF7304TRPBF
- IRF7304PBF
- IRF7304
- IRF7303TRPBF-CUTTAPE
- IRF7303TRPBF
- IRF7303TR-CUTTAPE
- IRF7303PBF
- IRF7303
- IRF7301TRPBF
- IRF7301PBF
- IRF7301HR
- IRF7301
- IRF7241TRPBF
- IRF7241PBF
- IRF7241
- IRF7240TRPBF
- IRF7240PBF
- IRF7240
- IRF7233
- IRF723
- IRF7220
- IRF722
- IRF7210
- IRF721
- IRF720SPBF
- IRF720S
- IRF720PBF
- IRF720LPBF
- IRF720B
- IRF720A
- IRF7207
- IRF7205TRPBF
- IRF7205PBF
- IRF7205
- IRF7204TRPBF-CUTTAPE
- IRF7204TRPBF
- IRF7204PBF
- IRF7204
- IRF7201TRPBF-CUTTAPE
- IRF7201TRPBF
- IRF7201PBF
- IRF7201
- IRF720
- IRF713
- IRF712
- IRF711
- IRF710SPBF
- IRF710S
- IRF710PBF
- IRF7105TRPBF
- IRF7105PBF
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