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位置：首页 > IC中文资料第210页 > IRF730

IRF730价格

参考价格：￥12.0790

型号：IRF730 品牌：Vishay 备注：这里有IRF730多少钱，2025年最近7天走势，今日出价，今日竞价，IRF730批发/采购报价，IRF730行情走势销售排行榜，IRF730报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF730

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF730issuppliedin

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

IRF730

N-CHANNEL400V-0.75ohm-5.5A-TO-220PowerMESH]MOSFET

Description ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. Generalfeatures

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF730

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF730

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

Intersil
IRF730

SMPSMOSFET

SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand

IRF

International Rectifier

IRF
IRF730

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

SUNTAC

Suntac Electronic Corp.

SUNTAC
IRF730

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

DCCOM
IRF730

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF730

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

A-POWER
IRF730

N-channelmosfettransistor

Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A •1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF730

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF730areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. FEATURES ●RDS(ON)=1.00Ω@VGS=10V ●Ultralowgatec

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI
IRF730

6.0A400VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

FCIFirst Components International

戈采戈采企业股份有限公司

FCI
IRF730

6.0A,400V,1.0廓N-CHANNELPOWERMOSFET

DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov

FS

First Silicon Co., Ltd

FS
IRF730

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF730

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
IRF730

PowerMOSFET

文件：277.08 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF730

HighPowerFactor/LowTHD

文件：355.59 Kbytes Page：16 Pages

IRF

International Rectifier

IRF
IRF730_V01

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF7301

MOSFET

Description TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhanced thermalcharacteristicsandmultiple-diecapabilitymakingitidealina varietyofpowerapplications.Withtheseimprovements,multipledevices canbeusedinanapplicationwithdramaticallyreducedboardspa

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7301

PowerMOSFET(Vdss=20V,Rds(on)=0.050ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF7301PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF7301TR

MOSFET

Description TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhanced thermalcharacteristicsandmultiple-diecapabilitymakingitidealina varietyofpowerapplications.Withtheseimprovements,multipledevices canbeusedinanapplicationwithdramaticallyreducedboardspa

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7301TR

GenerationVTechnology

Features VDS(V)=20V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7301TRPBF

DualN-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7303

DualN-ChannelMOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7303

DualN-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7303

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF
IRF7303

PowerMOSFET(Vdss=30V,Rds(on)=0.050ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF
IRF7303PBF

HEXFETPowerMOSFET(VDSS=30V,RDS(on)=0.050廓)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF
IRF7303TR

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF
IRF7303TR

DualN-ChannelMOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7303TR

DualN-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7303TRPBF

DualN-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7303TRPBF-TP

DualN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES @Ros(oN=35mO@VGS=10V ®Ros=45mO@VGS=4.5V ‘@SuperhighdensitycelldesignforextremelylowRos(oN) ®Exceptionalon-resistanceandmaximumDCcurent capability

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
IRF7304

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF7304

DualP-ChannelMOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free Features VDS(V)=-20V RDS(ON)140m(VGS=-2.7V) RDS(ON)90m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhan

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7304

DualP-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-20V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7304PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF
IRF7304QPBF

HEXFETPowerMOSFET

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF
IRF7304QTRPBF

DualP-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7304TR

DualP-ChannelMOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free Features VDS(V)=-20V RDS(ON)140m(VGS=-2.7V) RDS(ON)90m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhan

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7304TR

DualP-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-20V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7304TR

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF7306

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF7306PBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF7306QPBF

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFETsarea150°Cj

IRF

International Rectifier

IRF
IRF7306QTRPBF

DualP-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7306TRPBF

DualP-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7307

MOSFET

Features N-Ch： VDS(V)=20V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7307

GenerationVTechnologyUltra

GenerationVTechnologyUltra LowOn-Resistance DualNandPChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free 100 Features VDS(V)=20V RDS(ON)53m(VGS=4.5V) RDS(ON)70m(VGS=2.7V) VDS(V)=-20V RDS(ON)m(VGS=-4.5V) RDS(ON)140m(VGS=-2.7V) N-

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7307

PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF7307PBF

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF7307QPBF

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFETsarea150°Cj

IRF

International Rectifier

IRF
IRF7307TR

MOSFET

Features N-Ch： VDS(V)=20V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7307TR

GenerationVTechnologyUltra

GenerationVTechnologyUltra LowOn-Resistance DualNandPChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free 100 Features VDS(V)=20V RDS(ON)53m(VGS=4.5V) RDS(ON)70m(VGS=2.7V) VDS(V)=-20V RDS(ON)m(VGS=-4.5V) RDS(ON)140m(VGS=-2.7V) N-

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7309

DualNPChannelMOSFET

Industry-standardpinoutSO-8Package CompatiblewithExistingSurfaceMountTechniques VDS(V)=30V RDS(ON)70m(VGS=2.7V) RDS(ON)50m(VGS=4.5V) VDS(V)=-30V RDS(ON)100m(VGS=4.5V) RDS(ON)140m(VGS=2.7V) Features   N-Ch: P-Ch:

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
IRF7309

DualNPChannelMOSFET

Features N-Ch: VDS(V)=30V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
IRF7309

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknown

IRF

International Rectifier

IRF

IRF730产品属性

  • 类型

    描述

  • 型号

    IRF730

  • 功能描述

    MOSFET N-Chan 400V 5.5 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF730供应商更多...

更新时间：2025-8-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
IRF7307TR
Infineon(英飞凌)
24+
标准封装
7113
原厂渠道供应,大量现货,原型号开票。
询价
深圳市得捷芯城科技有限公司
IRF7306PBF
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市凌旭科技有限公司
IRF7301TR
IR
2016+
SOP
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
IRF7309TRPBF
INFINEON
23+
K-B
4000
只有原装,请来电咨询
询价
中天科工半导体（深圳）有限公司
IRF730NS
INFINEON/英飞凌
25+
TO-263
45000
IR全新现货IRF730NS即刻询购立享优惠#长期有排单订
询价
深圳市纳艾斯科技有限公司
IRF7303
IOR
24+
SOP/8
6000
全新原装正品现货 假一赔佰
询价
深圳市中赛美电子科技有限公司
IRF7306TRPBF
Infineon/英飞凌
23+
SO-8
12700
买原装认准中赛美
询价
深圳市能元时代电子有限公司
IRF730APBF
VISHAY
23+
TO220
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市禾兴威科技有限公司
IRF7304
IR
23+
NA
6800
原装正品,力挺实单
询价
深圳市纳立科技有限公司
IRF7309TRPBF
三年内
1983
只做原装正品
询价

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