丝印代码：IRF7303；Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

丝印代码：IRF7303；Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

丝印代码：IRF7303；Dual N-Channel MOSFET

Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

Dual N-Channel MOSFET

Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

采用 SO-8 封装的 IR MOSFET 30 V

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道 MOSFET;

Generation V Technology

文件：780.11 Kbytes Page：9 Pages

HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050廓 )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

丝印代码：F7303；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Ros(oN =35 mO@VGS=10V ® Ros =45 mO@VGS=4.5V ‘@ Super high density cell design for extremely low Ros(oN) ® Exceptional on-resistance and maximum DC curent capability

GENERATION V TECHNOLOGY

文件：236.1 Kbytes Page：9 Pages

GENERATION V TECHNOLOGY

文件：236.1 Kbytes Page：9 Pages

HEXFET Power MOSFET

文件：247.81 Kbytes Page：9 Pages

HEXFET Power MOSFET

HEXFETPOWERMOSET

文件：244.54 Kbytes Page：9 Pages

2.7 V to 5.5 V, Serial Input, Dual Voltage Output 8-Bit DAC

GENERAL DESCRIPTION The AD7303 is a dual, 8-bit voltage out DAC that operates from a single +2.7 V to +5.5 V supply. Its on-chip precision output buffers allow the DAC outputs to swing rail to rail. This device uses a versatile 3-wire serial interface that operates at clock rates up to 30 MHz, an

2.7 V to 5.5 V, Serial Input, Dual Voltage Output 8-Bit DAC

GENERAL DESCRIPTION The AD7303 is a dual, 8-bit voltage out DAC that operates from a single +2.7 V to +5.5 V supply. Its on-chip precision output buffers allow the DAC outputs to swing rail to rail. This device uses a versatile 3-wire serial interface that operates at clock rates up to 30 MHz, an

2.7 V to 5.5 V, Serial Input, Dual Voltage Output 8-Bit DAC

GENERAL DESCRIPTION The AD7303 is a dual, 8-bit voltage out DAC that operates from a single +2.7 V to +5.5 V supply. Its on-chip precision output buffers allow the DAC outputs to swing rail to rail. This device uses a versatile 3-wire serial interface that operates at clock rates up to 30 MHz, an

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics. Features • High radiant intensity • Suitable for pulse operation • Angle of half intens