Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

Dual N-Channel MOSFET

Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

30V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Generation V Technology

文件：780.11 Kbytes Page：9 Pages

HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050廓 )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Dual N-Channel MOSFET

Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Ros(oN =35 mO@VGS=10V ® Ros =45 mO@VGS=4.5V ‘@ Super high density cell design for extremely low Ros(oN) ® Exceptional on-resistance and maximum DC curent capability

GENERATION V TECHNOLOGY

文件：236.1 Kbytes Page：9 Pages

GENERATION V TECHNOLOGY

文件：236.1 Kbytes Page：9 Pages

HEXFET Power MOSFET

文件：247.81 Kbytes Page：9 Pages

HEXFET Power MOSFET

HEXFETPOWERMOSET

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7000 SERIES/HIGH RELIABILITY REED RELAYS

文件：1.39554 Mbytes Page：4 Pages

Miniature Rocker Lever Handle Switches

文件：1.58957 Mbytes Page：22 Pages

Female Pin Connectors

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Wire-Thread-Inserts

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7000 Series Miniature Toggle Switches

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