Generation V Technology Ultra

Low On-Resistance

Dual N and P Channel Mosfet

Surface Mount

Dynamic dv/dt Rating

Fast Switching

Lead-Free

100

Features

VDS (V) = 20V

RDS(ON) 53m (VGS = 4.5V)

RDS(ON) 70m (VGS = 2.7V)

VDS (V) = -20V

RDS(ON) m (VGS = -4.5V)

RDS(ON) 140m (VGS = -2.7V)

N-Ch：

P-Ch：



The so-8 has been modified through a customized

leadtrame for enhanced thermal characteristics and

multiple die capability making it ideal in a varietyof power

applications. Withtheseimprovements. multiple devices can

be used in an application with dramatically reduced board

space. The package is designed for vapor phase. infra red.

or wave soldering technigues. Power dissipation of greater

than 0.8W is possible in a typical PCB mount application.