DESCRIPTION

➤ IRF730 is 400V High voltage N-Channel enhancement

mode power MOS-FET chip fabricated in advanced

silicon epitaxial planar technology;

➤ Advanced termination scheme to provide enhanced voltage-blocking capability;

➤ Avalanche Energy Specified;

➤ Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode;

➤ IRF730 product is widely used in AC-DC power

suppliers, DC-DC converters and H-bridge PWM motor

drivers.

FEATURES

* 6.0A, 400V, RDS(ON)=1.0Ω

* Rugged - SOA is Power Dissipation Limited

* Fast Switching Speeds

* Single Pulse Avalanche EnergyRated

* Linear Transfer Characteristics

* High Input Impedance