HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

GENERATION V TECHNOLOGY

文件：2.10532 Mbytes Page：11 Pages

采用 SO-8 封装的 30V 双 N 通道和 P 通道 HEXFET 功率 MOSFET

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

HEXFET Power MOSFET

文件：1.80378 Mbytes Page：11 Pages

GENERATION V TECHNOLOGY

文件：2.065389 Mbytes Page：11 Pages

GENERATION V TECHNOLOGY

文件：2.065389 Mbytes Page：11 Pages

Industry-standard pinout SO-8 Package

文件：306.35 Kbytes Page：11 Pages

30V 单个 N 通道和 P 通道 HEXFET Power MOSFET， 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：306.35 Kbytes Page：11 Pages

HEXFET Power MOSFET

文件：1.97438 Mbytes Page：11 Pages

HEXFET Power MOSFET

GENERATION V TECHNOLOGY

文件：2.10532 Mbytes Page：11 Pages

T-1 Subminiature Lamps

T-1¼ Subminiature Lamps

Advanced Planar Technology Low On-Resistance

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET pow

Advanced Planar Technology Low On-Resistance

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET pow

Wire-Thread-Inserts

文件：102.37 Kbytes Page：3 Pages

AUTOMOTIVE GRADE

文件：462.33 Kbytes Page：12 Pages