丝印代码：IRF7309；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

丝印代码：IRF7309；Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

丝印代码：IRF7309；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

采用 SO-8 封装的 30V 双 N 通道和 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道和 P 通道 MOSFET;

Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

GENERATION V TECHNOLOGY

文件：2.10532 Mbytes Page：11 Pages

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

HEXFET Power MOSFET

文件：1.80378 Mbytes Page：11 Pages

GENERATION V TECHNOLOGY

文件：2.065389 Mbytes Page：11 Pages

GENERATION V TECHNOLOGY

文件：2.065389 Mbytes Page：11 Pages

Industry-standard pinout SO-8 Package

文件：306.35 Kbytes Page：11 Pages

30V 单个 N 通道和 P 通道 HEXFET Power MOSFET， 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：306.35 Kbytes Page：11 Pages

HEXFET Power MOSFET

文件：1.97438 Mbytes Page：11 Pages

HEXFET Power MOSFET

GENERATION V TECHNOLOGY

文件：2.10532 Mbytes Page：11 Pages

HIGH PERFORMANCE LOW POWER SYSTEM ON CHIP ENHANCED DIGITAL AUDIO INTERFACE

OVERVIEW The Maverick™ EP7309 is designed for ultra-low-power applications such as digital music players, internet appliances, smart cellular phones or any hand-held device that features the added capability of digital audio decompression. The core-logic functionality of the device is built aroun

HIGH PERFORMANCE LOW POWER SYSTEM ON CHIP ENHANCED DIGITAL AUDIO INTERFACE

OVERVIEW The Maverick™ EP7309 is designed for ultra-low-power applications such as digital music players, internet appliances, smart cellular phones or any hand-held device that features the added capability of digital audio decompression. The core-logic functionality of the device is built aroun

DIGITAL CONTROLLED STEREO AUDIO PROCESSOR WITH LOUDNESS

DESCRIPTION The TDA7309 is a control processor with independent left and right volume control for quality audio applications. Selectable external loudness and soft mute functions are provided. FEATURES ■ INPUT MULTIPLEXER: 3 STEREO INPUTS ■ RECORD OUTPUT FUNCTION ■ LOUDNESS FUNCTION

DIGITAL CONTROLLED STEREO AUDIO PROCESSOR WITH LOUDNESS

DESCRIPTION The TDA7309 is a control processor with independent left and right volume control for quality audio applications. Selectable external loudness and soft mute functions are provided. FEATURES ■ INPUT MULTIPLEXER: 3 STEREO INPUTS ■ RECORD OUTPUT FUNCTION ■ LOUDNESS FUNCTION