丝印代码：IRF7304；Dual P-Channel MOSFET

Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Features
VDS (V) = -20V
RDS(ON) 140 m (VGS =-2.7V)
RDS(ON) 90m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhan

丝印代码：IRF7304；Dual P-Channel MOSFET

Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Features
VDS (V) = -20V
RDS(ON) 140 m (VGS =-2.7V)
RDS(ON) 90m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhan

丝印代码：IRF7304；Dual P-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = -20V RDS(ON)

采用 SO-8 封装的 -20V 双 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 P 通道 MOSFET;

Dual P-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = -20V RDS(ON)

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET Power MOSFET

HEXFET Power MOSFET

Description These HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

GENERATION V TECHNOLOGY

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Generation V Technology

文件：242.58 Kbytes Page：9 Pages

HEXFETPOWERMOSFET

文件：248.23 Kbytes Page：9 Pages

GENERATION V TECHNOLOGY

文件：237.13 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：238.47 Kbytes Page：9 Pages

HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：238.47 Kbytes Page：9 Pages

HEXFET POWER MOSFET

文件：248.23 Kbytes Page：9 Pages

HEXFET Power MOSFET

HEXFET POWER MOSFET

文件：248.23 Kbytes Page：9 Pages

Generation V Technology

文件：242.58 Kbytes Page：9 Pages

3 V/5 V, Rail-to-Rail Quad, 8-Bit DAC

GENERAL DESCRIPTION The AD7304/AD73051 are quad, 8-bit DACs that operate from a single +3 V to +5 V supply, or ±5 V supplies. The AD7304 has a serial interface, while the AD7305 has a parallel interface. FEATURES Four 8-bit DACs in one package +3 V, +5 V, and ±5 V operation R

3 V/5 V, Rail-to-Rail Quad, 8-Bit DAC

GENERAL DESCRIPTION The AD7304/AD73051 are quad, 8-bit DACs that operate from a single +3 V to +5 V supply, or ±5 V supplies. The AD7304 has a serial interface, while the AD7305 has a parallel interface. FEATURES Four 8-bit DACs in one package +3 V, +5 V, and ±5 V operation R

3 V/5 V, Rail-to-Rail Quad, 8-Bit DAC

GENERAL DESCRIPTION The AD7304/AD73051 are quad, 8-bit DACs that operate from a single +3 V to +5 V supply, or ±5 V supplies. The AD7304 has a serial interface, while the AD7305 has a parallel interface. FEATURES Four 8-bit DACs in one package +3 V, +5 V, and ±5 V operation R

8-CHANNEL MULTIPLEXER WITH SAMPLE AND HOLD

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8-CHANNEL MULTIPLEXER WITH SAMPLE AND HOLD

文件：165.39 Kbytes Page：5 Pages