丝印代码：IRF7307；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

丝印代码：IRF7307；MOSFET

Features N-Ch： VDS (V) = 20V RDS(ON)

丝印代码：IRF7307；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

MOSFET

Features N-Ch： VDS (V) = 20V RDS(ON)

采用 SO-8 封装的 20V 双 N 通道和 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道和 P 通道 MOSFET;

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C j

丝印代码：F7101；Dual N and P Channel Mospet

文件：287.73 Kbytes Page：10 Pages

GENERATION V TECHNOLOGY

文件：287.73 Kbytes Page：10 Pages

GENERATION V TECHNOLOGY

文件：287.73 Kbytes Page：10 Pages

HEXFETPOWERMOSFET

HEXFETPOWERMOSFET

文件：300.02 Kbytes Page：10 Pages

HEXFET짰 Power MOSFET

文件：287.73 Kbytes Page：10 Pages

GENERAL DESCRIPTION

文件：150.87 Kbytes Page：9 Pages

The best light source is supported by the best electrode technology

文件：1.12019 Mbytes Page：7 Pages

11-BAND EVR FOR GRAPHIC EQUALIZER???

文件：260.31 Kbytes Page：9 Pages

11-BAND EVR FOR GRAPHIC EQUALIZER???

文件：260.31 Kbytes Page：9 Pages

11-BAND EVR FOR GRAPHIC EQUALIZER???

文件：260.31 Kbytes Page：9 Pages