丝印代码：IRF7309；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

丝印代码：IRF7309；Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

GENERATION V TECHNOLOGY

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HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

HIGH PERFORMANCE LOW POWER SYSTEM ON CHIP ENHANCED DIGITAL AUDIO INTERFACE

OVERVIEW The Maverick™ EP7309 is designed for ultra-low-power applications such as digital music players, internet appliances, smart cellular phones or any hand-held device that features the added capability of digital audio decompression. The core-logic functionality of the device is built aroun

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DIGITAL CONTROLLED STEREO AUDIO PROCESSOR WITH LOUDNESS

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