Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

GENERATION V TECHNOLOGY

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T-1 Subminiature Lamps

T-1¼ Subminiature Lamps

Advanced Planar Technology Low On-Resistance

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET pow

Advanced Planar Technology Low On-Resistance

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET pow

Wire-Thread-Inserts

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AUTOMOTIVE GRADE

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