IRF520价格

参考价格:¥11.3513

型号:IRF520 品牌:Vishay 备注:这里有IRF520多少钱,2024年最近7天走势,今日出价,今日竞价,IRF520批发/采购报价,IRF520行情走势销售排行榜,IRF520报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF520

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
IRF520

N-CHANNELENHANCEMENTMODEVERTICALDMOSPOWERFETs

N-CHANNELENHANCEMENTMODEVERTICALDMOSPOWERFETs Applications □Motorcontrol □Converters □Amplifiers □Switches □Powersupplycircuits □Drivers(Relays,Hammers,Solenoides,Lamps,Memeories,Displays,BipolarTransistors,etc.)

SUTEX

Supertex, Inc

SUTEX
IRF520

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF520

9.2A,100V,0.270Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfield effecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF520

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF520

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF520

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF520

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF520

N-ChannelMOSFETTransistor

•DESCRITION •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequire

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF520

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF520

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
IRF520

N-ChannelPowerMosfets,

文件:338.75 Kbytes Page:5 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF520

PowerMOSFET

文件:282 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

iscN-ChannelMOSFETTransistor

•DESCRITION •HighCurrent,HighSpeedSwitching •DC-DC&DC-ACConverters •MotorControl,AudioAmplifiers •FEATURES •TypicalRDS(on)=0.23Ω •AvalancheRuggedTechnology •HighCurrentCapability •LowGateCharge •175℃OperatingTemperature

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=100V,Rds(on)=0.20Ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Low-profilethrough-hole(IRF520NL)

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowin

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

Advamced{rpcessTechnologySurfaceMount

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Low-profilethrough-hole(IRF520NL)

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowin

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

Advamced{rpcessTechnologySurfaceMount

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HEXFETPowerMOSFET

HEXFET®PowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •RepetitiveAvalancheRated •175°COperatingTemperature •FastSwitching •EaseofParalleling •Materialcategorization:fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •RepetitiveAvalancheRated •175°COperatingTemperature •FastSwitching •EaseofParalleling •Materialcategorization:fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:282 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

iscN-ChannelMOSFETTransistor

文件:280.41 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:294.54 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-ChannelMOSFETTransistor

文件:338.56 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IscN-ChannelMOSFETTransistor

文件:300.27 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:195.99 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTSWITCHING

文件:414.57 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel100-V(D-S)MOSFET

文件:1.69112 Mbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

HEXFET짰PowerMOSFET

文件:178.07 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:179.03 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:195.99 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IscN-ChannelMOSFETTransistor

文件:188.95 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel100-V(D-S)MOSFET

文件:2.66307 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

FASTSWITCHING

文件:414.57 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTSWITCHING

文件:414.57 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:414.57 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:195.99 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:173.94 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

文件:212.59 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HEXFETPowerMOSFET

文件:225.14 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

文件:225.14 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ROUNDINSTRUMENTATIONHANDLES

[KEYSTONE] ROUNDINSTRUMENTATIONHANDLES FERRULES HANDLEMOUNTINGSCREWS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

Pentium4ProcessorsSupportingHyper-ThreadingTechnology

Introduction TheIntel®Pentium®4processoron90nmprocessinthe775-landpackageisafollowontothePentium4processorinthe478-pinpackagewithenhancementstotheIntelNetBurst®microarchitecture.ThePentium4processoron90nmprocessinthe775-landpackageusesFlipChipLandGr

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

MINIATUREFUSEHOLDERS

文件:89.37 Kbytes Page:1 Pages

LittelfuseLittelfuse Inc.

力特富斯(Littelfuse)力特公司

Littelfuse

횠6.1mmmountingRobuststainlesssteelhousing

文件:423.92 Kbytes Page:5 Pages

MARL

Marl International Ltd

MARL

SandblastStencil

文件:15.06 Kbytes Page:2 Pages

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M

IRF520产品属性

  • 类型

    描述

  • 型号

    IRF520

  • 功能描述

    MOSFET N-Chan 100V 9.2 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-11 15:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
90000
一级代理商进口原装现货、价格合理
IR
2020+
TO-220
22000
全新原装正品 现货库存 价格优势
IOR
22+
TO220
9518
绝对原装现货,价格低,欢迎询购!
IR/INFINEON
21+
TO-220
60000
原装正品进口现货
INFINEON/英飞凌
23+/24+
TO263
9865
用芯服务,原装正品MOS(场效应管)
IR
23+
TO-220
22000
原装现货假一罚十
IR
06+
TO-220
8000
原装库存
VISHAY
23+
TO-220
65400
IR
23+
TO263
12300
全新原装真实库存含13点增值税票!
IR
24+
TO 220
161301
明嘉莱只做原装正品现货

IRF520芯片相关品牌

  • Allegro
  • ETC1
  • HP
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  • LEM
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  • TOSHIBA
  • Vectron
  • Winchester

IRF520数据表相关新闻