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IRF520价格
参考价格:¥11.3513
型号:IRF520 品牌:Vishay 备注:这里有IRF520多少钱,2024年最近7天走势,今日出价,今日竞价,IRF520批发/采购报价,IRF520行情走势销售排行榜,IRF520报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF520 | N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
IRF520 | N-CHANNELENHANCEMENTMODEVERTICALDMOSPOWERFETs N-CHANNELENHANCEMENTMODEVERTICALDMOSPOWERFETs Applications □Motorcontrol □Converters □Amplifiers □Switches □Powersupplycircuits □Drivers(Relays,Hammers,Solenoides,Lamps,Memeories,Displays,BipolarTransistors,etc.) | SUTEX Supertex, Inc | ||
IRF520 | N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF520 | 9.2A,100V,0.270Ohm,N-ChannelPowerMOSFET ThisN-Channelenhancementmodesilicongatepowerfield effecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF520 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRF520 | IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF520 | N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF520 | N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF520 | N-ChannelMOSFETTransistor •DESCRITION •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequire | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF520 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRF520 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
IRF520 | N-ChannelPowerMosfets, 文件:338.75 Kbytes Page:5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
IRF520 | PowerMOSFET 文件:282 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor | VishayVishay Siliconix 威世科技威世科技半导体 | |||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMOSFETTransistor •DESCRITION •HighCurrent,HighSpeedSwitching •DC-DC&DC-ACConverters •MotorControl,AudioAmplifiers •FEATURES •TypicalRDS(on)=0.23Ω •AvalancheRuggedTechnology •HighCurrentCapability •LowGateCharge •175℃OperatingTemperature | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=9.7A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.20Ohm,Id=9.7A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Low-profilethrough-hole(IRF520NL) Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowin | KERSEMI Kersemi Electronic Co., Ltd. | |||
Advamced{rpcessTechnologySurfaceMount Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=9.7A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Low-profilethrough-hole(IRF520NL) Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowin | KERSEMI Kersemi Electronic Co., Ltd. | |||
Advamced{rpcessTechnologySurfaceMount Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFETPowerMOSFET HEXFET®PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •RepetitiveAvalancheRated •175°COperatingTemperature •FastSwitching •EaseofParalleling •Materialcategorization:fordefinitionsofcompliance | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •RepetitiveAvalancheRated •175°COperatingTemperature •FastSwitching •EaseofParalleling •Materialcategorization:fordefinitionsofcompliance | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:282 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
iscN-ChannelMOSFETTransistor 文件:280.41 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:294.54 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelMOSFETTransistor 文件:338.56 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
IscN-ChannelMOSFETTransistor 文件:300.27 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:195.99 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
FASTSWITCHING 文件:414.57 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel100-V(D-S)MOSFET 文件:1.69112 Mbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
HEXFET짰PowerMOSFET 文件:178.07 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:179.03 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:195.99 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:188.95 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel100-V(D-S)MOSFET 文件:2.66307 Mbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
FASTSWITCHING 文件:414.57 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
FASTSWITCHING 文件:414.57 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:414.57 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:195.99 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:173.94 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:212.59 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFETPowerMOSFET 文件:225.14 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET 文件:225.14 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ROUNDINSTRUMENTATIONHANDLES [KEYSTONE] ROUNDINSTRUMENTATIONHANDLES FERRULES HANDLEMOUNTINGSCREWS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
Pentium4ProcessorsSupportingHyper-ThreadingTechnology Introduction TheIntel®Pentium®4processoron90nmprocessinthe775-landpackageisafollowontothePentium4processorinthe478-pinpackagewithenhancementstotheIntelNetBurst®microarchitecture.ThePentium4processoron90nmprocessinthe775-landpackageusesFlipChipLandGr | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
MINIATUREFUSEHOLDERS 文件:89.37 Kbytes Page:1 Pages | LittelfuseLittelfuse Inc. 力特富斯(Littelfuse)力特公司 | |||
횠6.1mmmountingRobuststainlesssteelhousing 文件:423.92 Kbytes Page:5 Pages | MARL Marl International Ltd | |||
SandblastStencil 文件:15.06 Kbytes Page:2 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |
IRF520产品属性
- 类型
描述
- 型号
IRF520
- 功能描述
MOSFET N-Chan 100V 9.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
90000 |
一级代理商进口原装现货、价格合理 |
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IR |
2020+ |
TO-220 |
22000 |
全新原装正品 现货库存 价格优势 |
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IOR |
22+ |
TO220 |
9518 |
绝对原装现货,价格低,欢迎询购! |
|||
IR/INFINEON |
21+ |
TO-220 |
60000 |
原装正品进口现货 |
|||
INFINEON/英飞凌 |
23+/24+ |
TO263 |
9865 |
用芯服务,原装正品MOS(场效应管) |
|||
IR |
23+ |
TO-220 |
22000 |
原装现货假一罚十 |
|||
IR |
06+ |
TO-220 |
8000 |
原装库存 |
|||
VISHAY |
23+ |
TO-220 |
65400 |
||||
IR |
23+ |
TO263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IR |
24+ |
TO 220 |
161301 |
明嘉莱只做原装正品现货 |
IRF520规格书下载地址
IRF520参数引脚图相关
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- kse13005
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- km710
- ka5q1265rf
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- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- irf630
- irf540n
- irf540
- IRF532R
- IRF532
- IRF531R
- IRF531
- IRF530S
- IRF530R
- IRF530NSPBF
- IRF530NPBF
- IRF530N
- IRF530L
- IRF530A
- IRF5305STRRPBF
- IRF5305STRLPBF-CUTTAPE
- IRF5305STRLPBF
- IRF5305SPBF
- IRF5305PBF
- IRF5305LPBF
- IRF5305
- IRF530
- IRF523
- IRF522
- IRF5210STRRPBF-CUTTAPE
- IRF5210STRRPBF
- IRF5210STRLPBF
- IRF5210SPBF
- IRF5210PBF
- IRF5210LPBF
- IRF5210
- IRF521
- IRF520V
- IRF520S
- IRF520PBF
- IRF520NSTRLPBF
- IRF520NSPBF
- IRF520NPBF
- IRF520N
- IRF520L
- IRF520A
- IRF513
- IRF512
- IRF511
- IRF510STRRPBF
- IRF510STRLPBF
- IRF510SPBF
- IRF510S
- IRF510PBF
- IRF510N
- IRF510A
- IRF510
- IRF500
- IRF4S3
- IRF4N60
- IRF4905STRRPBF
- IRF4905STRLPBF-CUTTAPE
- IRF4905STRLPBF
- IRF4905SPBF
- IRF4905PBF
- IRF4905LPBF
- IRF4905
- IRF48N
- IRF470
- IRF462
- IRF460
- IRF-46
- IRF453
- IRF452
- IRF451
- IRF450
- IRF441
- IRF440
- IRF430
- IRF4104SPBF
- IRF4104PBF
- IRF4104GPBF
- IRF40B207
- IRF3808STRRPBF
IRF520数据表相关新闻
IRF5305PBF
原装进口代理
2022-10-19IRF520NPBF
全新原装现货支持第三方机构验证
2022-10-19IRF3710STRLPBF 原装正品
INFINEON/英飞凌现货100K
2022-7-6IRF3205ZSTRLPBF
IRF3205ZSTRLPBF
2022-4-26IRF3710PBF原装现货
IRF3710PBF原装正品
2021-8-9IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
2019-12-17
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