Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET Power MOSFET

文件：225.14 Kbytes Page：11 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages