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IRF520NLPBF中文资料
IRF520NLPBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced Process Technology
• Surface Mount (IRF520NS)
• Low-profile through-hole (IRF520NL)
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
IRF520NLPBF产品属性
- 类型
描述
- 型号
IRF520NLPBF
- 功能描述
MOSFET N-CH 100V 9.7A TO-262
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262-3 |
128 |
||||
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
25+ |
TO-262 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
ir |
24+ |
500000 |
行业低价,代理渠道 |
||||
Infineon Technologies |
23+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原装正品，支持实单 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
IRF520NLPBF 资料下载更多...
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