位置：首页 > IC中文资料第8697页 > IRF520V
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF520V | Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF |   | |
IRF520V | Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) | INFINEON 英飞凌 | | |
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET짰 Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF | | ||
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) | INFINEON 英飞凌 | | ||
HEXFET Power MOSFET 文件：225.14 Kbytes Page：11 Pages | IRF | | ||
HEXFET Power MOSFET 文件：225.14 Kbytes Page：11 Pages | IRF | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere) VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca | PANJIT 強茂 | | ||
Amplifier with Voltage Controlled Gain, AGCAmp 文件：609.73 Kbytes Page：8 Pages | NSC 国半 | | ||
Amplifier with Voltage Controlled Gain, AGCAmp 文件：609.73 Kbytes Page：8 Pages | NSC 国半 | | ||
Amplifier with Voltage Controlled Gain, AGCAmp 文件：609.73 Kbytes Page：8 Pages | NSC 国半 | | ||
Amplifier with Voltage Controlled Gain, AGCAmp 文件：609.73 Kbytes Page：8 Pages | NSC 国半 | |
IRF520V产品属性
- 类型
描述
- 型号
IRF520V
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
03+ |
TO-262 |
390 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IRF520VS |
25+ |
250 |
250 |
||||
IR |
25+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
|||
ir |
25+ |
500000 |
行业低价,代理渠道 |
||||
IR |
23+ |
TO-262 |
58031 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
SOT-263 |
6934 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
25+23+ |
TO-263 |
16761 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
SOT263 |
8000 |
原装正品支持实单 |
IRF520V规格书下载地址
IRF520V参数引脚图相关
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IRF520V数据表相关新闻
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2021-8-9IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
2019-12-17
DdatasheetPDF页码索引
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