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型号 功能描述 生产厂家 企业 LOGO 操作
IRF520V

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF520V

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

INFINEON

英飞凌

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

INFINEON

英飞凌

HEXFET Power MOSFET

文件:225.14 Kbytes Page:11 Pages

IRF

HEXFET Power MOSFET

文件:225.14 Kbytes Page:11 Pages

IRF

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

PANJIT

強茂

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

Amplifier with Voltage Controlled Gain, AGCAmp

文件:609.73 Kbytes Page:8 Pages

NSC

国半

IRF520V产品属性

  • 类型

    描述

  • 型号

    IRF520V

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

更新时间:2026-8-4 8:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
26+
SOT263
16794
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
ir
25+
500000
行业低价,代理渠道
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR/VISHAY
20+
D2-Pak
36900
原装优势主营型号-可开原型号增税票
IR
03+
TO-262
390
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
SOT-263
6934
一级代理 原装正品假一罚十价格优势长期供货
IRF520VS
25+
250
250
IR
25+23+
TO-263
16761
绝对原装正品全新进口深圳现货
IR
22+
SOT263
8000
原装正品支持实单

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