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IRF520N价格
参考价格:¥1.8172
型号:IRF520NPBF 品牌:INTERNATIONAL 备注:这里有IRF520N多少钱,2025年最近7天走势,今日出价,今日竞价,IRF520N批发/采购报价,IRF520N行情走势销售排行榜,IRF520N报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
IRF520N | Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | ||
IRF520N | isc N-Channel MOSFET Transistor 文件:294.54 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRF520N | 100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | ||
Low-profile through-hole (IRF520NL) Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in | KERSEMI | |||
Advamced {rpcess Technology Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Low-profile through-hole (IRF520NL) Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in | KERSEMI | |||
Advamced {rpcess Technology Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
N-Channel MOSFET Transistor 文件:338.56 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Isc N-Channel MOSFET Transistor 文件:300.27 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Advanced Process Technology 文件:195.99 Kbytes Page:11 Pages | IRF | |||
FAST SWITCHING 文件:414.57 Kbytes Page:11 Pages | IRF | |||
FAST SWITCHING | Infineon 英飞凌 | |||
N-Channel 100-V (D-S) MOSFET 文件:1.69112 Mbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
HEXFET짰 Power MOSFET 文件:178.07 Kbytes Page:9 Pages | IRF | |||
Advanced Process Technology 文件:179.03 Kbytes Page:9 Pages | IRF | |||
N-Channel 100-V (D-S) MOSFET 文件:2.66307 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
Advanced Process Technology 文件:195.99 Kbytes Page:11 Pages | IRF | |||
Isc N-Channel MOSFET Transistor 文件:188.95 Kbytes Page:2 Pages | ISC 无锡固电 | |||
100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | Infineon 英飞凌 | |||
FAST SWITCHING 文件:414.57 Kbytes Page:11 Pages | IRF | |||
FAST SWITCHING 文件:414.57 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:414.57 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:195.99 Kbytes Page:11 Pages | IRF | |||
ROUND INSTRUMENTATION HANDLES [KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
Pentium 4 Processors Supporting Hyper-Threading Technology Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr | Intel 英特尔 | |||
MINIATURE FUSEHOLDERS 文件:89.37 Kbytes Page:1 Pages | Littelfuse 力特 | |||
횠6.1mm mounting Robust stainless steel housing 文件:423.92 Kbytes Page:5 Pages | MARL | |||
Sandblast Stencil 文件:15.06 Kbytes Page:2 Pages | 3M |
IRF520N产品属性
- 类型
描述
- 型号
IRF520N
- 功能描述
MOSFET N-CH 100V 9.7A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
22000 |
原装现货假一罚十 |
|||
24+ |
TO-220 |
500000 |
行业低价,代理渠道 |
||||
IR |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
Infineon |
23+ |
TO220 |
15500 |
英飞凌优势渠道全系列在售 |
|||
IR |
01+ |
TO-220 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飞凌原装特价IRF520N即刻询购立享优惠#长期有货 |
|||
IR |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-263 |
501293 |
免费送样原盒原包现货一手渠道联系 |
|||
IR(国际整流器) |
24+ |
N/A |
46048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
TO-220 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
IRF520N规格书下载地址
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IRF520N数据表相关新闻
IRF5305PBF
原装进口代理
2022-10-19IRF520NPBF
全新原装现货 支持第三方机构验证
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INFINEON/英飞凌 现货100K
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IRF3205ZSTRLPBF
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IRF3710PBF原装正品
2021-8-9IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
2019-12-17
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