Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET

\n优势:\n \n • 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

isc N-Channel MOSFET Transistor

文件：294.54 Kbytes Page：2 Pages

Low-profile through-hole (IRF520NL)

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in

Advamced {rpcess Technology Surface Mount

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Low-profile through-hole (IRF520NL)

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in

采用 D2-Pak 封装的 100V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Advamced {rpcess Technology Surface Mount

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel MOSFET Transistor

文件：338.56 Kbytes Page：2 Pages

Isc N-Channel MOSFET Transistor

文件：300.27 Kbytes Page：2 Pages

Advanced Process Technology

文件：195.99 Kbytes Page：11 Pages

FAST SWITCHING

文件：414.57 Kbytes Page：11 Pages

FAST SWITCHING

N-Channel 100-V (D-S) MOSFET

文件：1.69112 Mbytes Page：7 Pages

HEXFET짰 Power MOSFET

文件：178.07 Kbytes Page：9 Pages

Advanced Process Technology

文件：179.03 Kbytes Page：9 Pages

Advanced Process Technology

文件：195.99 Kbytes Page：11 Pages

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：188.95 Kbytes Page：2 Pages

丝印代码：D2PAK；N-Channel 100-V (D-S) MOSFET

文件：2.66307 Mbytes Page：8 Pages

FAST SWITCHING

文件：414.57 Kbytes Page：11 Pages

FAST SWITCHING

文件：414.57 Kbytes Page：11 Pages

Advanced Process Technology

文件：414.57 Kbytes Page：11 Pages

Advanced Process Technology

文件：195.99 Kbytes Page：11 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages