IRF520N价格

参考价格:¥1.8172

型号:IRF520NPBF 品牌:INTERNATIONAL 备注:这里有IRF520N多少钱,2025年最近7天走势,今日出价,今日竞价,IRF520N批发/采购报价,IRF520N行情走势销售排行榜,IRF520N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF520N

Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF520N

isc N-Channel MOSFET Transistor

文件:294.54 Kbytes Page:2 Pages

ISC

无锡固电

IRF520N

100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

Low-profile through-hole (IRF520NL)

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in

KERSEMI

Advamced {rpcess Technology Surface Mount

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Low-profile through-hole (IRF520NL)

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in

KERSEMI

Advamced {rpcess Technology Surface Mount

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

N-Channel MOSFET Transistor

文件:338.56 Kbytes Page:2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

文件:300.27 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:195.99 Kbytes Page:11 Pages

IRF

FAST SWITCHING

文件:414.57 Kbytes Page:11 Pages

IRF

FAST SWITCHING

Infineon

英飞凌

N-Channel 100-V (D-S) MOSFET

文件:1.69112 Mbytes Page:7 Pages

VBSEMI

微碧半导体

HEXFET짰 Power MOSFET

文件:178.07 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:179.03 Kbytes Page:9 Pages

IRF

N-Channel 100-V (D-S) MOSFET

文件:2.66307 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Advanced Process Technology

文件:195.99 Kbytes Page:11 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:188.95 Kbytes Page:2 Pages

ISC

无锡固电

100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

FAST SWITCHING

文件:414.57 Kbytes Page:11 Pages

IRF

FAST SWITCHING

文件:414.57 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:414.57 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:195.99 Kbytes Page:11 Pages

IRF

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

Intel

英特尔

MINIATURE FUSEHOLDERS

文件:89.37 Kbytes Page:1 Pages

Littelfuse

力特

횠6.1mm mounting Robust stainless steel housing

文件:423.92 Kbytes Page:5 Pages

MARL

Sandblast Stencil

文件:15.06 Kbytes Page:2 Pages

3M

IRF520N产品属性

  • 类型

    描述

  • 型号

    IRF520N

  • 功能描述

    MOSFET N-CH 100V 9.7A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-29 21:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-220
22000
原装现货假一罚十
24+
TO-220
500000
行业低价,代理渠道
IR
25+
SOP
3200
全新原装、诚信经营、公司现货销售
Infineon
23+
TO220
15500
英飞凌优势渠道全系列在售
IR
01+
TO-220
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRF520N即刻询购立享优惠#长期有货
IR
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
IR
24+
TO-263
501293
免费送样原盒原包现货一手渠道联系
IR(国际整流器)
24+
N/A
46048
原厂可订货,技术支持,直接渠道。可签保供合同
IR
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货

IRF520N数据表相关新闻