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MC1404价格

参考价格：￥1.0042

型号：MC14040BDG 品牌：ONSemi 备注：这里有MC1404多少钱，2025年最近7天走势，今日出价，今日竞价，MC1404批发/采购报价，MC1404行情走势销售排行榜，MC1404报价。

型号	功能描述	生产厂家企业	LOGO
MC1404	PRECISION LOW DRIFT VOLTAGE REFERENCES Voltage Reference Family The MC1404 of ICs is a family of temperature–compensated voltage references for precision data conversion applications, such as A/D, D/A, V/F, and F/V. Advances in laser–trimming and ion–implanted devices, as well as monolithic fabrication techniques, make these devices s	ONSEMI 安森美半导体	ONSEMI
MC14040	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040B	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040B	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BCP	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BCPG	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BD	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BDG	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BDR2	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BDR2G	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BDT	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BDTR2G	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BF	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BFEL	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14040BFELG	12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device advances the count on the negative−going	ONSEMI 安森美半导体	ONSEMI
MC14042	Quad Transparent Latch The MC14042B Quad Transparent Latch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	ONSEMI 安森美半导体	ONSEMI
MC14042B	Quad Transparent Latch The MC14042B Quad Transparent Latch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	ONSEMI 安森美半导体	ONSEMI
MC14042B	QUAD TRANSPARENT LATCH The MC14042B Quad Transparent Latch is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	Motorola 摩托罗拉	Motorola
MC14042B	CMOS LSI (LOW-POWER COMPLEMENTARY MOS) 3 1/2 DIGIT A/D CONVERTER CMOS LSI(LOW-POWER COMPLEMENTARY MOS) 3 1/2 DIGIT A/D CONVERTER	Motorola 摩托罗拉	Motorola
MC14042BCL	QUAD TRANSPARENT LATCH The MC14042B Quad Transparent Latch is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	Motorola 摩托罗拉	Motorola
MC14042BCP	QUAD TRANSPARENT LATCH The MC14042B Quad Transparent Latch is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	Motorola 摩托罗拉	Motorola
MC14042BCP	Quad Transparent Latch The MC14042B Quad Transparent Latch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	ONSEMI 安森美半导体	ONSEMI
MC14042BD	Quad Transparent Latch The MC14042B Quad Transparent Latch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	ONSEMI 安森美半导体	ONSEMI
MC14042BD	QUAD TRANSPARENT LATCH The MC14042B Quad Transparent Latch is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	Motorola 摩托罗拉	Motorola
MC14042BDR2	Quad Transparent Latch The MC14042B Quad Transparent Latch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	ONSEMI 安森美半导体	ONSEMI
MC14042BF	Quad Transparent Latch The MC14042B Quad Transparent Latch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	ONSEMI 安森美半导体	ONSEMI
MC14042BFEL	Quad Transparent Latch The MC14042B Quad Transparent Latch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	ONSEMI 安森美半导体	ONSEMI
MC14042BFR1	Quad Transparent Latch The MC14042B Quad Transparent Latch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	ONSEMI 安森美半导体	ONSEMI
MC14042BFR2	Quad Transparent Latch The MC14042B Quad Transparent Latch is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each latch has a separate data input, but all four latches share a common clock. The clock polarity (high or low) used to strobe data through the latches c	ONSEMI 安森美半导体	ONSEMI
MC14043B	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14043BCP	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14043BD	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14043BDR2	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14043BF	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14043BFEL	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14044B	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14044BCP	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14044BD	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14044BDR2	CMOS MSI(Quad R-S Latches) The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input.	ONSEMI 安森美半导体	ONSEMI
MC14046B	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046B	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046B_05	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BCL	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BCP	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BCP	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BCPG	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BDW	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BDW	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BDWG	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BDWR2	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BDWR2G	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BF	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BFEL	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14046BFELG	Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage signals, or indirectly coupled (with a s	ONSEMI 安森美半导体	ONSEMI
MC14049	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes	ONSEMI 安森美半导体	ONSEMI
MC14049B	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes	ONSEMI 安森美半导体	ONSEMI
MC14049B	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.	ONSEMI 安森美半导体	ONSEMI
MC14049B_V01	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.	ONSEMI 安森美半导体	ONSEMI
MC14049BCP	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes	ONSEMI 安森美半导体	ONSEMI
MC14049BCPG	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes	ONSEMI 安森美半导体	ONSEMI

替换型号	功能描述	生产厂家企业	LOGO
4040	HIGH VOLTAGE CAPACITORS MONOLITHIC CERAMIC TYPE	SEMTECH 先之科	SEMTECH
4040	Ceramic Stand-off Insulators for RF-Equipment	VishayVishay Siliconix 威世科技	Vishay
CD4040BCN	14-Stage, 12-Stage Ripple Carry Binary Counters	NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司	NSC
CD4040BCN	14-Stage Ripple Carry Binary Counters . 12-Stage Ripple Carry Binary Counters . 14-Stage Ripple Carry Binary Counters	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
CD4040BE	CMOS RIPPLE-CARRY BINARY COUNTER DIVIDERS	TI 德州仪器	TI
CD4040BF	CMOS RIPPLE-CARRY BINARY COUNTER DIVIDERS	TI 德州仪器	TI
CD4040BMJ	14-Stage, 12-Stage Ripple Carry Binary Counters	NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司	NSC
HCC4040BF	RIPPLE-CARRY BINARY COUNTER/DIVIDERS	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HCF4040BF	RIPPLE-CARRY BINARY COUNTER/DIVIDERS	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HD14040B	12-bit Binary Counter	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HEF4040BD	12-stage binary counter	Philips 飞利浦	Philips
HEF4040BP	12-stage binary counter	Philips 飞利浦	Philips
SCL4040B	TWELVE STAGE BINARY COUNTER	RANDER & E International, Inc.	RANDE
TC4040BP	12 Stage Ripple-Carry Binary Counter/Dividers	TOSHIBA 东芝	TOSHIBA
TC4040BP	12 STAGE RIPPLE - CARRY BINARY COUNTER/DIVIDERS	TOSHIBA 东芝	TOSHIBA

MC1404产品属性

类型
描述
型号
MC1404
制造商
ONSEMI
制造商全称
ON Semiconductor
功能描述
PRECISION LOW DRIFT VOLTAGE REFERENCES

MC1404供应商更多...

更新时间：2025-9-19 15:24:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	MC14049UBFEL	0N	24+	SOP	39500	进口原装现货支持实单价优	询价
深圳市永贝尔科技有限公司	MC14049BDR2G	ON(安森美)	2023+	SOIC-16_150mil	4550	全新原装正品	询价
深圳市美思瑞电子科技有限公司	MC14046BDW	ON	22+	SOP	21055	原装正品，实单请联系	询价
深圳市富诚威科技有限公司	MC14049BDR2G	ON	25+	SOP16	29500	绝对原装现货!价格优势!	询价
深圳市昌和盛利电子有限公司	MC14049BDR2G	ON	23+	原装正品	12874		询价
深圳市汇莱威科技有限公司	MC14049BDR2G	ON安森美	24+	SOP-16	13500	免费送样原盒原包现货一手渠道联系	询价
深圳市煦洪科技有限公司	MC14049UBDR2G	ON/安森美	25+	原厂封装	10280	原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!	询价
深圳市凌旭科技有限公司	MC14049UBCP	ON	2016+	DIP16	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市金华微盛电子有限公司	MC14049UBCPG	ON	19+	DIP	18600		询价
深圳市明嘉莱科技有限公司	MC14044BDR2G	ON Semiconductor Corporation	25+	SMD	918000	明嘉莱只做原装正品现货	询价

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MC1403BD-精密低电压基准
精密的带鈥揼美联社参考电压设计的关键仪器仪表和D / A转换器应用。本机的设计工作与D/ A转换器，精度高达12位，或作为功率参考电源应用。输出电压：2.5伏25毫伏输入电压范围：4.5 V至40 V 静态电流：1.2 mA典型输出电流：10毫安温度系数：10 ppm的/掳C典型保证温度漂移规范相当于AD580 标准8鈥扬在DIP和SOIC封装在8鈥扬典型应用参考电压为8至12位D/ A转换器
2013-3-17

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