N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

N-Channel MOSFET Transistor

文件：198.96 Kbytes Page：2 Pages

Trans MOSFET 60V 14A 3-Pin(2+Tab) TO-3

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.036Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

VDSS = 100V RDS(on) = 0.04Ω ID = 41A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that H

HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru

HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru

HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru

HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru

HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru

HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru

Isc N-Channel MOSFET Transistor

文件：300.57 Kbytes Page：2 Pages

HEXFET Power MOSFET

ADVANCED PROCESS TECHNOLOGY

文件：599.79 Kbytes Page：9 Pages

HEXFET POWER MOSFET

文件：592.94 Kbytes Page：8 Pages

ADVANCED PROCESS TECHNOLOGY

文件：599.79 Kbytes Page：9 Pages

Isc N-Channel MOSFET Transistor

文件：189.3 Kbytes Page：2 Pages

100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

ADVANCED PROCESS TECHNOLOGY

文件：726.76 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：726.76 Kbytes Page：11 Pages

Advanced Process Technology

文件：726.76 Kbytes Page：11 Pages

GAMMA SEALS

DESCRIPTION The BECA 131 profile is a gamma seal. The design of the metal part offers additional protection in the form of a labyrinth in the housing, should there be a higher pollution level compared to the BECA 130 profile. APPLICATIONS Axles Machine tools Electric motors Pumps T

GABINETE S ALMENDRA 111 x 83 x 38mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

GABINETE S GRIS 111 x 83 x 38mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

GABINETE S NEGRO 111 X 83 X 38 mm CON UNA CARA LISA

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. . Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages