HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

Speaker Cable, 4 C #14 Str BC-OFHC, PVC Jkt, CM, DIR BUR, Flexible

Product Description Speaker Cable, 4 Conductor 14 AWG (105 x 34) Oxygen-Free Bare Copper (High Conductivity), PE Insulation, PVC Jacket, CM, Direct Burial, Flexible

Customer Specification

Construction Diameters (In) 1) Component 1 16 X 1 PAIR a) Conductor 22 (SOLID) AWG Tinned Copper 0.025 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.045 (1) Color Code Alpha Wire Color Code A Pair Color Pair Color Pair Color 1 BLACK-RED 7 BLACKORANGE 13 RED-ORANGE 2 BLACK-WHITE 8 RED-

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time