位置：首页 > IC中文资料第6794页 > IRF1312
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF1312 | HEXFET Power MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru | IRF |   | |
IRF1312 | HEXFET Power MOSFET | Infineon 英飞凌 | | |
HEXFET Power MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru | IRF | | ||
HEXFET Power MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru | IRF | | ||
HEXFET Power MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru | IRF | | ||
HEXFET Power MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru | IRF | | ||
HEXFET Power MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Motor Control • Uninterru | IRF | | ||
HEXFET Power MOSFET | Infineon 英飞凌 | | ||
Speaker Cable, 4 C #12 Str BC-OFHC, PVC Jkt, CM, DIR BUR, Flexible Product Description Speaker Cable, 4 Conductor 12 AWG (168 x 34) Oxygen-Free Bare Copper (High Conductivity), PE Insulation, PVC Jacket, CM, Direct Burial, Flexible | BELDEN 百通 | | ||
Window “View Port” Plugs 文件：120.92 Kbytes Page：1 Pages | Heyco | | ||
Precise temperature control 文件：538.07 Kbytes Page：2 Pages | LSTD 莱尔德 | | ||
Precise temperature control 文件：563.92 Kbytes Page：2 Pages | LSTD 莱尔德 | | ||
Window “View Port” Plugs 文件：120.92 Kbytes Page：1 Pages | Heyco | |
IRF1312产品属性
- 类型
描述
- 型号
IRF1312
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
HEXFET Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价IRF1312PBF即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
NEW |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
24+ |
TO-220 |
5000 |
原装现货假一赔十 |
|||
IR |
24+ |
TO-262 |
8866 |
||||
IR |
25+ |
QFN |
18000 |
原厂直接发货进口原装 |
|||
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
|||
IR |
23+ |
TO-262 |
5000 |
原装正品,假一罚十 |
|||
IR/VISHAY |
24+ |
NA/ |
26050 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO-262 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
IRF1312规格书下载地址
IRF1312参数引脚图相关
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2020-4-18IRA-S210ST01
IRA-S210ST01，全新原装现货当天发货或门市自取0755-82732291.
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2020-1-12IR51H224-自激式半桥
特点 ·输出功率MOSFET在半桥配置 ·高侧栅极驱动器引导操作设计 ·自举二极管集成包（HD型） ·精确的定时控制两个功率MOSFET匹配延迟获得50％的占空比匹配死区的1.2us ·内部振荡器具有可编程的频率 ·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰 ·微功率启动 说明 该IR51H（四）XXX是完整的高电压，高转速，selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术，随着的HEXFET®功率MOSFET技术，使
2013-2-8
DdatasheetPDF页码索引
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