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IRF1310N价格
参考价格：￥3.4325
型号：IRF1310NPBF 品牌：INTERNATIONAL 备注：这里有IRF1310N多少钱，2025年最近7天走势，今日出价，今日竞价，IRF1310N批发/采购报价，IRF1310N行情走势销售排行榜，IRF1310N报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF1310N | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRF1310N | N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.036Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRF1310N | 100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | | |
Advanced Process Technology Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter | KERSEMI | | ||
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter | KERSEMI | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：300.57 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
HEXFET Power MOSFET | Infineon 英飞凌 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：599.79 Kbytes Page：9 Pages | IRF | | ||
HEXFET POWER MOSFET 文件：592.94 Kbytes Page：8 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：599.79 Kbytes Page：9 Pages | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：189.3 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | Infineon 英飞凌 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：726.76 Kbytes Page：11 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：726.76 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：726.76 Kbytes Page：11 Pages | IRF | | ||
200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time | VMI | | ||
200 V - 1,000 V Single Phase Bridge [VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Speaker Cable, 4 C #14 Str BC-OFHC, PVC Jkt, CM, DIR BUR, Flexible Product Description Speaker Cable, 4 Conductor 14 AWG (105 x 34) Oxygen-Free Bare Copper (High Conductivity), PE Insulation, PVC Jacket, CM, Direct Burial, Flexible | BELDEN 百通 | | ||
Customer Specification Construction Diameters (In) 1) Component 1 16 X 1 PAIR a) Conductor 22 (SOLID) AWG Tinned Copper 0.025 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.045 (1) Color Code Alpha Wire Color Code A Pair Color Pair Color Pair Color 1 BLACK-RED 7 BLACKORANGE 13 RED-ORANGE 2 BLACK-WHITE 8 RED- | ALPHAWIREAlpha Wire 阿尔法电线 | | ||
200 V - 1,000 V Single Phase Bridge [VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | |
IRF1310N产品属性
- 类型
描述
- 型号
IRF1310N
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
10026 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-220 |
65400 |
||||
IR |
23+ |
TO-220 |
22000 |
原装现货假一罚十 |
|||
IR |
24+ |
TO-263 |
501255 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
25+23+ |
TO-220 |
27564 |
绝对原装正品全新进口深圳现货 |
|||
IR |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
24+ |
TO-263 |
577 |
只做原厂渠道 可追溯货源 |
|||
IR |
23+ |
TO-220 |
4500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
IRF1310N规格书下载地址
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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DdatasheetPDF页码索引
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