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IRF1310N价格
参考价格:¥3.4325
型号:IRF1310NPBF 品牌:INTERNATIONAL 备注:这里有IRF1310N多少钱,2024年最近7天走势,今日出价,今日竞价,IRF1310N批发/采购报价,IRF1310N行情走势销售排行榜,IRF1310N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF1310N | PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF1310N | N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
FullyAvalancheRated Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:300.57 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:599.79 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPOWERMOSFET 文件:592.94 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:599.79 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:189.3 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:726.76 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:726.76 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:726.76 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
200V-1,000VSinglePhaseBridge4.5A-5.0AForwardCurrent70ns-3000nsRecoveryTime 200V-1,000VSinglePhaseBridge 4.5A-5.0AForwardCurrent 70ns-3000nsRecoveryTime | VMI Voltage Multipliers | |||
200V-1,000VSinglePhaseBridge [VOLTAGEMULTIPLIERSINC.] 200V-1,000VSinglePhaseBridge 4.5A-5.0AForwardCurrent 70ns-3000nsRecoveryTime | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SpeakerCable,4C#14StrBC-OFHC,PVCJkt,CM,DIRBUR,Flexible ProductDescription SpeakerCable,4Conductor14AWG(105x34)Oxygen-FreeBareCopper(HighConductivity),PEInsulation,PVCJacket,CM,DirectBurial,Flexible | BELDEN Belden Inc. | |||
CustomerSpecification Construction Diameters(In) 1)Component116X1PAIR a)Conductor22(SOLID)AWGTinnedCopper0.025 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.045 (1)ColorCodeAlphaWireColorCodeA PairColorPairColorPairColor 1BLACK-RED7 BLACKORANGE 13RED-ORANGE 2BLACK-WHITE8RED- | ALPHAWIREAlpha Wire 阿尔法电线 | |||
200V-1,000VSinglePhaseBridge [VOLTAGEMULTIPLIERSINC.] 200V-1,000VSinglePhaseBridge 4.5A-5.0AForwardCurrent 70ns-3000nsRecoveryTime | ETCList of Unclassifed Manufacturers 未分类制造商 |
IRF1310N产品属性
- 类型
描述
- 型号
IRF1310N
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON TECHNOLOGIES AG |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/IR |
1907+ |
NA |
2400 |
20年老字号,原装优势长期供货 |
|||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
|||
Infineon Technologies |
23+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INTERNATIONAL RECTIFIER |
20000 |
原装现货,可追溯原厂渠道 |
|||||
Infineon(英飞凌) |
23+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
2017+ |
TO-220 |
24589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
4800 |
专营INFINEON/英飞凌全新原装进口正品 |
|||
IR |
22+ |
TO-263 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
IRF1310N规格书下载地址
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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
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特点·输出功率MOSFET在半桥配置·高侧栅极驱动器引导操作设计·自举二极管集成包(HD型)·精确的定时控制两个功率MOSFET匹配延迟获得50%的占空比匹配死区的1.2us·内部振荡器具有可编程的频率·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰·微功率启动说明该IR51H(四)XXX是完整的高电压,高转速,selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术,随着的HEXFET®功率MOSFET技术,使
2013-2-8
DdatasheetPDF页码索引
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