HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ADVANCED PROCESS TECHNOLOGY

文件：726.76 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：726.76 Kbytes Page：11 Pages

200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

Speaker Cable, 4 C #14 Str BC-OFHC, PVC Jkt, CM, DIR BUR, Flexible

Product Description Speaker Cable, 4 Conductor 14 AWG (105 x 34) Oxygen-Free Bare Copper (High Conductivity), PE Insulation, PVC Jacket, CM, Direct Burial, Flexible

Customer Specification

Construction Diameters (In) 1) Component 1 16 X 1 PAIR a) Conductor 22 (SOLID) AWG Tinned Copper 0.025 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.045 (1) Color Code Alpha Wire Color Code A Pair Color Pair Color Pair Color 1 BLACK-RED 7 BLACKORANGE 13 RED-ORANGE 2 BLACK-WHITE 8 RED-

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time