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IRF1310NSPBF中文资料
IRF1310NSPBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1310NL) is available for low profile applications.
● Advanced Process Technology
● Surface Mount (IRF1310NS)
● Low-profile through-hole (IRF1310NL)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRF1310NSPBF产品属性
- 类型
描述
- 型号
IRF1310NSPBF
- 功能描述
MOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
D2PAK |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-263 |
501254 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
24+ |
原厂封装 |
2940 |
原装现货假一罚十 |
|||
IR |
25+ |
TO-263 |
120 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
10+PBF |
TO-263 |
31 |
优势 |
|||
IR |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
IRF1310NSPBF 价格
参考价格:¥4.0719
IRF1310NSPBF 资料下载更多...
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