POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135/136/137 Compliance to RoHS.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A • Complement to Type TIP136 APPLICATIONS • Designed for general-purpose amplifier and low-sp

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP135, TIP136 and TIP137 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 4 A

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • Collector saturation voltage • Complement to type TIP135/136/137 APPLICATIONS • Designed for general-purpose amplifier and low speed switching applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and TIP

Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) −

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear and Switching Applications

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear and Switching Applications

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 80V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 80V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN 达林顿双极功率晶体管

Silicon NPN Darlington Power Transistors

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Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) −

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear and Switching Applications

GAMMA SEALS

DESCRIPTION The BECA 131 profile is a gamma seal. The design of the metal part offers additional protection in the form of a labyrinth in the housing, should there be a higher pollution level compared to the BECA 130 profile. APPLICATIONS Axles Machine tools Electric motors Pumps T

GABINETE S ALMENDRA 111 x 83 x 38mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

GABINETE S GRIS 111 x 83 x 38mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

GABINETE S NEGRO 111 X 83 X 38 mm CON UNA CARA LISA

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. . Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

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