Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) −

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear and Switching Applications

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • Collector saturation voltage • Complement to type TIP135/136/137 APPLICATIONS • Designed for general-purpose amplifier and low speed switching applications

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP135, TIP136 and TIP137 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 4 A

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and TIP

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A • Complement to Type TIP136 APPLICATIONS • Designed for general-purpose amplifier and low-sp

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear and Switching Applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135/136/137 Compliance to RoHS.

NPN 达林顿双极功率晶体管

该达林顿双极功率晶体管适用于通用放大器和低速开关应用。TIP131、TIP132 (NPN)；和 TIP137 (PNP) 为互补器件。 • High DC Current Gain.hfe=2500 Typ at Ic=4.0 Adc\n• Collector-Emitter Sustaining Voltage at 30 mAdc: 80 Vdc Min TIP131 & 100 Vdc Min TIP132, TIP137\n• Low Collector-Emitter Saturation Voltage: 2.0 Vdc Max at Ic=4.0 Adc & 3.0 Vdc Max at Ic=6.0 Adc\n• Monolithic Construction with Built-In Base-Emitte;

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 80V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 80V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Darlington Power Transistors

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Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) −

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear and Switching Applications

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us