包装：散装 描述：SCREWDRIVER SET,2 PC,CUSHION GRI 工具 螺丝和螺母起子 - 套件

Silicon Carbide Schottky Diode

Features • 600-Volt Schottky Rectifer • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coeffcient on VF Benefts • Replace Bipolar with Unipolar Rectifer

CSD22202W15 P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description The device is designed to de

CSD22202W15 P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description The device is designed to de

CSD22202W15 P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description The device is designed to de

CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

CSD25211W1015, P-Channel NexFET™ Power MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • Small footprint 1.0 mm × 1.5 mm • Low profile 0.62 mm height • Pb Free • Gate-source voltage clamp • Gate ESD protection – 3 kV • RoHS compliant • Halogen free 2 Applications • Battery Management • Load Switch • Battery P

CSD25211W1015, P-Channel NexFET™ Power MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • Small footprint 1.0 mm × 1.5 mm • Low profile 0.62 mm height • Pb Free • Gate-source voltage clamp • Gate ESD protection – 3 kV • RoHS compliant • Halogen free 2 Applications • Battery Management • Load Switch • Battery P

CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This

CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This

CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This

CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This

CSD25481F4 20 V P-Channel FemtoFET™ MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R

CSD25481F4 20 V P-Channel FemtoFET™ MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R

CSD25481F4 20 V P-Channel FemtoFET™ MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R

CSD25481F4 20 V P-Channel FemtoFET™ MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R