CSD2价格

参考价格:¥1863.7027

型号:CSD201610 品牌:Hoffman 备注:这里有CSD2多少钱,2026年最近7天走势,今日出价,今日竞价,CSD2批发/采购报价,CSD2行情走势销售排行榜,CSD2报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CSD2

包装:散装 描述:SCREWDRIVER SET,2 PC,CUSHION GRI 工具 螺丝和螺母起子 - 套件

ATG

丝印代码:CSD20060;Silicon Carbide Schottky Diode

Features • 600-Volt Schottky Rectifer • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coeffcient on VF Benefts • Replace Bipolar with Unipolar Rectifer

CREE

科锐

丝印代码:CSD25404;CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This

TI

德州仪器

丝印代码:CSD25404;CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This

TI

德州仪器

丝印代码:CSD25404;CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This

TI

德州仪器

丝印代码:CSD25404;CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This

TI

德州仪器

丝印代码:CSD20030;ZERO RECOVERY RECTIFIER

文件:239.32 Kbytes Page:4 Pages

CREE

科锐

丝印代码:22202;CSD22202W15 P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description The device is designed to de

TI

德州仪器

丝印代码:22202;CSD22202W15 P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description The device is designed to de

TI

德州仪器

CSD22202W15 P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description The device is designed to de

TI

德州仪器

丝印代码:22204;CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

TI

德州仪器

CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

TI

德州仪器

丝印代码:22204;CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

TI

德州仪器

CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

TI

德州仪器

丝印代码:205;CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

TI

德州仪器

丝印代码:205;CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

TI

德州仪器

丝印代码:205;CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

TI

德州仪器

丝印代码:205;CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

TI

德州仪器

丝印代码:22206;CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

TI

德州仪器

丝印代码:22206;CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

TI

德州仪器

丝印代码:22206;CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

TI

德州仪器

丝印代码:22206;CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

TI

德州仪器

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

TI

德州仪器

丝印代码:22206;CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

TI

德州仪器

丝印代码:22206;CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

TI

德州仪器

丝印代码:22206;CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

TI

德州仪器

丝印代码:22206;CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

TI

德州仪器

丝印代码:202;CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

TI

德州仪器

丝印代码:202;CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

TI

德州仪器

丝印代码:202;CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

TI

德州仪器

丝印代码:202;CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

TI

德州仪器

丝印代码:23203;CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

TI

德州仪器

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

TI

德州仪器

丝印代码:23203;CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

TI

德州仪器

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

TI

德州仪器

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

TI

德州仪器

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

TI

德州仪器

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

TI

德州仪器

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

TI

德州仪器

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

TI

德州仪器

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

TI

德州仪器

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

TI

德州仪器

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

TI

德州仪器

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

丝印代码:25202;CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

TI

德州仪器

CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

TI

德州仪器

丝印代码:25202;CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

TI

德州仪器

CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

TI

德州仪器

丝印代码:25211;CSD25211W1015, P-Channel NexFET™ Power MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • Small footprint 1.0 mm × 1.5 mm • Low profile 0.62 mm height • Pb Free • Gate-source voltage clamp • Gate ESD protection – 3 kV • RoHS compliant • Halogen free 2 Applications • Battery Management • Load Switch • Battery P

TI

德州仪器

丝印代码:25211;CSD25211W1015, P-Channel NexFET™ Power MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • Small footprint 1.0 mm × 1.5 mm • Low profile 0.62 mm height • Pb Free • Gate-source voltage clamp • Gate ESD protection – 3 kV • RoHS compliant • Halogen free 2 Applications • Battery Management • Load Switch • Battery P

TI

德州仪器

丝印代码:25304;CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

TI

德州仪器

丝印代码:25304;CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

TI

德州仪器

丝印代码:25304;CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

TI

德州仪器

丝印代码:25304;CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

TI

德州仪器

CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

TI

德州仪器

丝印代码:25402;CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

TI

德州仪器

丝印代码:25402;CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

TI

德州仪器

丝印代码:25402;CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

TI

德州仪器

CSD25481F4 20 V P-Channel FemtoFET™ MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R

TI

德州仪器

CSD25481F4 20 V P-Channel FemtoFET™ MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R

TI

德州仪器

CSD2产品属性

  • 类型

    描述

  • 型号

    CSD2

  • 功能描述

    ZERO RECOVERY RECTIFIER

更新时间:2026-3-13 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
DSBGA-6
3000
代理渠道/只做原装/可含税
TI(德州仪器)
25+
VSONP-8(3.3x3.3)
7589
全新原装现货,支持排单订货,可含税开票
TI/德州仪器
25+
SON6
32000
TI/德州仪器全新特价CSD25310Q2即刻询购立享优惠#长期有货
CREE(科锐)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TI
24+
PICOSTAR-3
65200
一级代理/放心采购
CREE
25+
4
公司优势库存 热卖中!
CREE
13+
TO-3P
8
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CIRRUS
24+
QFP
6618
公司现货库存,支持实单
TI/德州仪器
2231+
VSONP-8
58000
A3-7货柜原装正品支持实单
CREE(科锐)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

CSD2数据表相关新闻