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CSD2价格
参考价格：￥1863.7027
型号：CSD201610 品牌：Hoffman 备注：这里有CSD2多少钱，2025年最近7天走势，今日出价，今日竞价，CSD2批发/采购报价，CSD2行情走势销售排行榜，CSD2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD2 | 包装：散装 描述：SCREWDRIVER SET,2 PC,CUSHION GRI 工具 螺丝和螺母起子 - 套件 | ApexToolGroup Apex Tool Group |  |   |
Silicon Carbide Schottky Diode Features •600-VoltSchottkyRectifer •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •High-FrequencyOperation •Temperature-IndependentSwitchingBehavior •ExtremelyFastSwitching •PositiveTemperatureCoeffcientonVF Benefts •ReplaceBipolarwithUnipolarRectifer | CreeCree, Inc 科锐 |  | | |
CSD22204W –8 V P-Channel NexFET™ Power MOSFET 1Features 1•LowResistance •SmallFootprint1.5mm×1.5mm •PbFree •GateESDProtection •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •BatteryManagement •BatteryProtection •LoadSwitchApplications 3Description This–8V,8.2mΩ,1.5mm× | TI2Texas Instruments 德州仪器美国德州仪器公司 |  | | |
CSD22204W –8 V P-Channel NexFET™ Power MOSFET 1Features 1•LowResistance •SmallFootprint1.5mm×1.5mm •PbFree •GateESDProtection •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •BatteryManagement •BatteryProtection •LoadSwitchApplications 3Description This–8V,8.2mΩ,1.5mm× | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD22204W –8 V P-Channel NexFET™ Power MOSFET 1Features 1•LowResistance •SmallFootprint1.5mm×1.5mm •PbFree •GateESDProtection •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •BatteryManagement •BatteryProtection •LoadSwitchApplications 3Description This–8V,8.2mΩ,1.5mm× | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD22204W –8 V P-Channel NexFET™ Power MOSFET 1Features 1•LowResistance •SmallFootprint1.5mm×1.5mm •PbFree •GateESDProtection •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •BatteryManagement •BatteryProtection •LoadSwitchApplications 3Description This–8V,8.2mΩ,1.5mm× | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowResistance •SmallFootprint1.5mm×1.5mm •LeadFree •GateESDProtection •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •LoadSwitchApplications •BatteryManagement •BatteryProtection 3Description This–8-V,4.7-mΩ,1 | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowResistance •SmallFootprint1.5mm×1.5mm •LeadFree •GateESDProtection •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •LoadSwitchApplications •BatteryManagement •BatteryProtection 3Description This–8-V,4.7-mΩ,1 | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowResistance •SmallFootprint1.5mm×1.5mm •LeadFree •GateESDProtection •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •LoadSwitchApplications •BatteryManagement •BatteryProtection 3Description This–8-V,4.7-mΩ,1 | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowResistance •SmallFootprint1.5mm×1.5mm •LeadFree •GateESDProtection •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •LoadSwitchApplications •BatteryManagement •BatteryProtection 3Description This–8-V,4.7-mΩ,1 | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •SmallFootprint1mm×1mm •LowProfile0.62-mmHeight •PbFree •GateESDProtection–3kV •RoHSCompliant •HalogenFree 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This12V,44mΩdeviceisdesi | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •SmallFootprint1mm×1mm •LowProfile0.62-mmHeight •PbFree •GateESDProtection–3kV •RoHSCompliant •HalogenFree 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This12V,44mΩdeviceisdesi | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •SmallFootprint1mm×1mm •LowProfile0.62-mmHeight •PbFree •GateESDProtection–3kV •RoHSCompliant •HalogenFree 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This12V,44mΩdeviceisdesi | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •SmallFootprint1mm×1mm •LowProfile0.62-mmHeight •PbFree •GateESDProtection–3kV •RoHSCompliant •HalogenFree 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This12V,44mΩdeviceisdesi | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR NPNSILICONPLANAREPITAXIALTRANSISTOR | CDIL Continental Device India Limited |  | | |
CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1Features 1•Low-Resistance •SmallFootprint1.5mm×1.5mm •GateESDProtection–3kV •PbFree •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •BatteryManagement •BatteryProtection 3Description This21mΩ,20Vdeviceisdesignedtodeliverthe | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1Features 1•Low-Resistance •SmallFootprint1.5mm×1.5mm •GateESDProtection–3kV •PbFree •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •BatteryManagement •BatteryProtection 3Description This21mΩ,20Vdeviceisdesignedtodeliverthe | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1Features 1•Low-Resistance •SmallFootprint1.5mm×1.5mm •GateESDProtection–3kV •PbFree •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •BatteryManagement •BatteryProtection 3Description This21mΩ,20Vdeviceisdesignedtodeliverthe | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1Features 1•Low-Resistance •SmallFootprint1.5mm×1.5mm •GateESDProtection–3kV •PbFree •RoHSCompliant •HalogenFree •Gate-SourceVoltageClamp 2Applications •BatteryManagement •BatteryProtection 3Description This21mΩ,20Vdeviceisdesignedtodeliverthe | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •SmallFootprint •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree •CSP1×1.5mmWaferLevelPackage 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This27mΩ,–20V,P-Channeldevice | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •SmallFootprint •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree •CSP1×1.5mmWaferLevelPackage 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This27mΩ,–20V,P-Channeldevice | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •SmallFootprint •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree •CSP1×1.5mmWaferLevelPackage 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This27mΩ,–20V,P-Channeldevice | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •SmallFootprint •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree •CSP1×1.5mmWaferLevelPackage 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This27mΩ,–20V,P-Channeldevice | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •LowRDS(on) •PbandHalogenFree •RoHSCompliant •SON3.3mm×3.3mmPlasticPackage 2Applications •DC-DCConverters •BatteryManagement •LoadSwitch •BatteryProtection 3Description This–20-V,7.7-mΩNexFET™ | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •LowRDS(on) •PbandHalogenFree •RoHSCompliant •SON3.3mm×3.3mmPlasticPackage 2Applications •DC-DCConverters •BatteryManagement •LoadSwitch •BatteryProtection 3Description This–20-V,7.7-mΩNexFET™ | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •LowRDS(on) •PbandHalogenFree •RoHSCompliant •SON3.3mm×3.3mmPlasticPackage 2Applications •DC-DCConverters •BatteryManagement •LoadSwitch •BatteryProtection 3Description This–20-V,7.7-mΩNexFET™ | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •LowRDS(on) •PbandHalogenFree •RoHSCompliant •SON3.3mm×3.3mmPlasticPackage 2Applications •DC-DCConverters •BatteryManagement •LoadSwitch •BatteryProtection 3Description This–20-V,7.7-mΩNexFET™ | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •LowRDS(on) •HalogenFree •RoHSCompliant •PbFreeTerminalPlating •SON3.3mm×3.3mmPlasticPackage 2Applications •DC-DCConverters •BatteryManagement •LoadSwitch •BatteryProtection 3Description This | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •LowRDS(on) •HalogenFree •RoHSCompliant •PbFreeTerminalPlating •SON3.3mm×3.3mmPlasticPackage 2Applications •DC-DCConverters •BatteryManagement •LoadSwitch •BatteryProtection 3Description This | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •LowRDS(on) •HalogenFree •RoHSCompliant •PbFreeTerminalPlating •SON3.3mm×3.3mmPlasticPackage 2Applications •DC-DCConverters •BatteryManagement •LoadSwitch •BatteryProtection 3Description This | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET 1Features 1•Ultra-LowQgandQgd •LowThermalResistance •LowRDS(on) •HalogenFree •RoHSCompliant •PbFreeTerminalPlating •SON3.3mm×3.3mmPlasticPackage 2Applications •DC-DCConverters •BatteryManagement •LoadSwitch •BatteryProtection 3Description This | TI2Texas Instruments 德州仪器美国德州仪器公司 | | | |
PNP/NPN PLASTIC POWER TRANSISTOR CSA614PNPPLASTICPOWERTRANSISTOR CSD288NPNPLASTICPOWERTRANSISTOR LowfrequencyPowerAmplifierandPowerRegulator TO-220PlasticPackage | CDIL Continental Device India Limited | | | |
ZERO RECOVERY RECTIFIER 文件：224.57 Kbytes Page：4 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
ZERO RECOVERY RECTIFIER 文件：239.32 Kbytes Page：4 Pages | CreeCree, Inc 科锐 | | | |
ZERO RECOVERY RECTIFIER 文件：224.57 Kbytes Page：4 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | | |
ZERO RECOVERY RECTIFIER 文件：239.32 Kbytes Page：4 Pages | CreeCree, Inc 科锐 | | | |
ZERO RECOVERY RECTIFIER 文件：168.04 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
ZERO RECOVERY RECTIFIER 文件：168.04 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
封装/外壳：TO-247-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 600V TO247 分立半导体产品 二极管 - 整流器 - 阵列 | WOLFSPEED WOLFSPEED, INC. |  | | |
RECTIFIER 文件：358.49 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
RECTIFIER 文件：358.49 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Super Low Barrier High Voltage Power Rectifier 文件：466.74 Kbytes Page：3 Pages | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 |  | | |
N-Channel MOSFET uses advanced trench technology 文件：1.5696 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | | |
P-Channel NexFET Power MOSFET 文件：999.71 Kbytes Page：12 Pages | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
8 V P-Channel NexFET Power MOSFET 文件：470.61 Kbytes Page：12 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 |  | | |
CSD22204W ?? V P-Channel NexFET Power MOSFET 文件：1.02841 Mbytes Page：15 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
8 V P-Channel NexFET Power MOSFET 文件：470.61 Kbytes Page：12 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
8-V P-Channel NexFET Power MOSFET 文件：618.32 Kbytes Page：11 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
8-V P-Channel NexFET Power MOSFET 文件：618.32 Kbytes Page：11 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
8-V P-Channel NexFET Power MOSFET 文件：411 Kbytes Page：12 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
8-V P-Channel NexFET Power MOSFET 文件：411 Kbytes Page：12 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
P-Channel NexFET??Power MOSFET 文件：147.48 Kbytes Page：8 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
P-Channel NexFET Power MOSFET 文件：166.63 Kbytes Page：10 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
P-Channel NexFET Power MOSFET 文件：166.63 Kbytes Page：10 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
12-V P-Channel NexFET Power MOSFET 文件：440.93 Kbytes Page：12 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD23202W10 12-V P-Channel NexFET Power MOSFET 文件：1.02391 Mbytes Page：15 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
12-V P-Channel NexFET Power MOSFET 文件：440.93 Kbytes Page：12 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
8 V P-Channel NexFET Power MOSFET 文件：369.96 Kbytes Page：12 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
CSD23203W 8 V P-Channel NexFET Power MOSFET 文件：1.00932 Mbytes Page：17 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
8 V P-Channel NexFET Power MOSFET 文件：369.96 Kbytes Page：12 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | |
CSD2产品属性
- 类型
描述
- 型号
CSD2
- 功能描述
ZERO RECOVERY RECTIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
24+ |
DFN |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
CIRRUS |
24+ |
LQFP128 |
18766 |
公司现货库存,支持实单 |
|||
TI(德州仪器) |
24+ |
标准封装 |
7308 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
analogysemi(类比半导体) |
24+ |
MSOP10 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
TI/德州仪器 |
22+ |
QFN |
100000 |
代理渠道/只做原装/可含税 |
|||
TI |
25+ |
DSBGA-6 |
3000 |
代理渠道/只做原装/可含税 |
|||
TI |
22+ |
18000 |
原装现货,假一罚十 |
||||
TI |
24+ |
SON-6 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
TI(德州仪器) |
2024+ |
4-DSBGA(1x1) |
500000 |
诚信服务,绝对原装原盘 |
|||
TI/德州仪器 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
CSD2芯片相关品牌
CSD2规格书下载地址
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焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-23CSD19531Q5A原厂原装现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-22
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