丝印代码：23203；CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、19.4mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET

这款 –8V、16.2mΩ、P 通道器件经过设计，能够以具有出色散热特性的 1 × 1.5 mm 超薄小外形封装提供最低的导通电阻和栅极电荷。 • 超低 Qg 和 Qgd\n• 低导通电阻 RDS(on) \n• 小尺寸\n• 低厚度，0.62mm 高\n• 无铅\n• 符合 RoHS 环保标准\n• 无卤素\n• CSP 1mm × 1.5mm 晶圆级封装;

8 V P-Channel NexFET Power MOSFET

文件：369.96 Kbytes Page：12 Pages

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

丝印代码：23203；CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

CSD23203W 8 V P-Channel NexFET Power MOSFET

文件：1.00932 Mbytes Page：17 Pages

8 V P-Channel NexFET Power MOSFET

文件：369.96 Kbytes Page：12 Pages