丝印代码：CSD20060；Silicon Carbide Schottky Diode

Features • 600-Volt Schottky Rectifer • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coeffcient on VF Benefts • Replace Bipolar with Unipolar Rectifer

ZERO RECOVERY RECTIFIER

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封装/外壳：TO-247-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 600V TO247 分立半导体产品 二极管 - 整流器 - 阵列

RF SIC HEMT 70W,1805 - 2170MHZ

Fast Recovery Diode

FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge APPLICATIONS ■ Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode

SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS

POWERTAP II SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward

SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS

POWERTAP II SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward

RF POWER BROADBAND NPN BIPOLAR

文件：109.9 Kbytes Page：10 Pages

RF POWER BROADBAND NPN BIPOLAR

文件：109.9 Kbytes Page：10 Pages