| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD22206W | 丝印代码：22206；CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 |   | |
CSD22206W | 丝印代码：22206；CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | |
CSD22206W | 采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、5.7mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET 这款 –8V、4.7mΩ、1.5mm × 1.5mm 器件设计用于在超薄且具有出色散热特性的超小外形尺寸封装内提供最低的导通电阻和栅极电荷。低导通电阻与小型封装尺寸和低高度结合在一起，使得此器件非常适合于电池供电运行的空间受限 应用。 • 超低电阻\n• 小尺寸封装 1.5mm x 1.5mm\n• 无铅\n• 栅极静电放电 (ESD) 保护\n• 符合 RoHS 环保标准\n• 无卤素\n• 栅 - 源电压钳位; | TI 德州仪器 | | |
CSD22206W | 8-V P-Channel NexFET Power MOSFET 文件：411 Kbytes Page：12 Pages | TI 德州仪器 | | |
丝印代码：22206；CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
丝印代码：22206；CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
丝印代码：22206；CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
丝印代码：22206；CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
丝印代码：22206；CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
丝印代码：22206；CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
8-V P-Channel NexFET Power MOSFET 文件：411 Kbytes Page：12 Pages | TI 德州仪器 | | ||
Switch DP2T FEATURES • 3-200 MHz • 1 dB Insertion Loss • 45 dB Isolation • Small DIP Package | DAICO | | ||
1-4 Poles Coded Rotary Switches 文件：379.73 Kbytes Page：4 Pages | ITT | | ||
1-4 Poles Coded Rotary Switches 文件：379.73 Kbytes Page：4 Pages | ITT | | ||
1-4 Poles Coded Rotary Switches 文件：379.73 Kbytes Page：4 Pages | ITT | | ||
1-4 Poles Coded Rotary Switches 文件：379.73 Kbytes Page：4 Pages | ITT | |
CSD22206W产品属性
- 类型
描述
- VGS (V)：
-6
- Configuration：
Single
- Rds(on) max at VGS=4.5 V (mOhms)：
5.7
- Rds(on) max at VGS=2.5 V (mOhms)：
9.1
- Id peak (Max) (A)：
-108
- Id max cont (A)：
-5
- QG typ (nC)：
11.2
- QGD typ (nC)：
1.8
- QGS typ (nC)：
2.1
- VGSTH typ (V)：
-0.7
- Package (mm)：
WLP 1.5x1.5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
DSBGA9 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI(德州仪器) |
26+ |
DSBGA-9 |
10548 |
原厂订货渠道,支持账期,一站式服务! |
|||
TI(德州仪器) |
25+ |
N/A |
6000 |
十二年VIP会员,诚信经营,原装库存·可零售! |
|||
TI |
25+ |
DSBGA-9 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
TI |
24+ |
DSBGA-9 |
5000 |
全新原装正品,现货销售 |
|||
TI |
24+ |
DSBGA-9 |
9800 |
原装正品优势供应支持实单 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI/德州仪器 |
23+ |
DSBGA9 |
5000 |
只有原装,欢迎来电咨询! |
|||
TI(德州仪器) |
23+ |
N/A |
6000 |
公司只做原装，可来电咨询 |
|||
TI(德州仪器) |
25+ |
DSBGA-9 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
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CSD22206W规格书下载地址
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2020-12-22
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