| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD22206W | CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 |   | |
CSD22206W | 8-V P-Channel NexFET Power MOSFET 文件：411 Kbytes Page：12 Pages | TI 德州仪器 | | |
CSD22206W | 采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、5.7mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | TI 德州仪器 | | |
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
CSD22206W –8-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1 | TI 德州仪器 | | ||
8-V P-Channel NexFET Power MOSFET 文件：411 Kbytes Page：12 Pages | TI 德州仪器 | | ||
Slim and compact size 文件：136.5 Kbytes Page：6 Pages | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI/德州仪器 |
22+ |
DSBGA-9 |
50000 |
||||
TI(德州仪器) |
24+ |
DSBGA-9 |
9548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TI(德州仪器) |
24+ |
BGA-9 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
TI |
24+ |
DSBGA-9 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
TI |
24+ |
DSBGA-9 |
5000 |
全新原装正品,现货销售 |
|||
TI/德州仪器 |
25+ |
DSBGA-9 |
860000 |
明嘉莱只做原装正品现货 |
|||
TI |
24+ |
DSBGA-9 |
9800 |
原装正品优势供应支持实单 |
|||
TI/德州仪器 |
23+ |
DSBGA9 |
5000 |
TI原厂原装全系列订货假一赔十 |
|||
TI(德州仪器) |
23+ |
N/A |
6000 |
公司只做原装，可来电咨询 |
CSD22206W规格书下载地址
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2020-12-22
DdatasheetPDF页码索引
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