位置：首页 > IC中文资料 > CSD25202W15.B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD25202W15.B | CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the | TI 德州仪器 |   | |
CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the | TI 德州仪器 | | ||
20V P-Channel NexFET Power MOSFET 文件：416.25 Kbytes Page：12 Pages | TI 德州仪器 | | ||
CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the | TI 德州仪器 | | ||
20V P-Channel NexFET Power MOSFET 文件：416.25 Kbytes Page：12 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
22+ |
9UFBGA DSBGA |
9000 |
原厂渠道,现货配单 |
|||
TI |
23+ |
NA |
1136 |
专做原装正品,假一罚百! |
|||
TI |
25+23+ |
New |
35822 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
TI |
20+ |
NA |
53650 |
TI原装主营-可开原型号增税票 |
|||
TI/德州仪器 |
22+ |
DSBGA6 |
8000 |
原装正品,支持实单! |
|||
TI/德州仪器 |
2450+ |
DSBGA(YZF)9 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI |
23+ |
DSBGA6 |
18708 |
正规渠道,只有原装! |
|||
TI |
2116+ |
DSBGA-6 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TI/德州仪器 |
24+ |
DSBGA-6 |
9600 |
原装现货,优势供应,支持实单! |
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CSD25202W15.B规格书下载地址
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2020-12-22
DdatasheetPDF页码索引
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