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2SK311价格

参考价格：￥1.6900

型号：2SK3113-Z-E2 品牌：NEC 备注：这里有2SK311多少钱，2025年最近7天走势，今日出价，今日竞价，2SK311批发/采购报价，2SK311行情走势销售排行榜，2SK311报价。

型号	功能描述	生产厂家企业	LOGO
2SK311	SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) HIGH SPEED POWER SWITCHING Complementary pair with 2SJ117	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK311	Drain Current ?밒D=3A@ TC=25C 文件：65.57 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3110	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on)	NEC 瑞萨	NEC
2SK3110	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES •Gate vol	RENESAS 瑞萨	RENESAS
2SK3111	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo	RENESAS 瑞萨	RENESAS
2SK3111	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on)	NEC 瑞萨	NEC
2SK3111	MOS Field Effect Transistor Features ● Gate voltage rating ±30 V ● Low on-state resistance RDS(on) = 180mΩ MAX. (VGS = 10 V, ID = 10A) ● Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V) ● Avalanche capability rated ● Built-in gate protection diode ● Surface mount device available	KEXIN 科信电子	KEXIN
2SK3111-S	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on)	NEC 瑞萨	NEC
2SK3111-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo	RENESAS 瑞萨	RENESAS
2SK3111-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo	RENESAS 瑞萨	RENESAS
2SK3111-ZJ	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on)	NEC 瑞萨	NEC
2SK3112	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 110	NEC 瑞萨	NEC
2SK3112	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo	RENESAS 瑞萨	RENESAS
2SK3112	MOS Field Effect Transistor Features ● Gate voltage rating 30 V ● Low on-state resistance RDS(on) = 110m MAX. (VGS = 10 V, ID = 13A) ● Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V) ● Avalanche capability rated ● Built-in gate protection diode ● Surface mount device available	KEXIN 科信电子	KEXIN
2SK3112-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo	RENESAS 瑞萨	RENESAS
2SK3112-S	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 110	NEC 瑞萨	NEC
2SK3112-ZJ	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 110	NEC 瑞萨	NEC
2SK3112-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. FEATURES • Gate vo	RENESAS 瑞萨	RENESAS
2SK3113	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(	RENESAS 瑞萨	RENESAS
2SK3113	MOS Field Effect Transistor Features Low on-state resistance RDS(on)=4.4Ω MAX. (VGS=10V,ID=1.0A) Low gate charge QG= 9 nC TYP. (VDD=450V,VGS=10V,ID=2.0A) Gate voltage rating ±30V Avalanche capability ratings	KEXIN 科信电子	KEXIN
2SK3113	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0	NEC 瑞萨	NEC
2SK3113B	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o	RENESAS 瑞萨	RENESAS
2SK3113B	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)	NEC 瑞萨	NEC
2SK3113B-S15-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)	NEC 瑞萨	NEC
2SK3113B-S15-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o	RENESAS 瑞萨	RENESAS
2SK3113B-S27-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o	RENESAS 瑞萨	RENESAS
2SK3113B-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o	RENESAS 瑞萨	RENESAS
2SK3113B-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)	NEC 瑞萨	NEC
2SK3113B-ZK-E1-AY	N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC	VBSEMI 微碧半导体	VBSEMI
2SK3113B-ZK-E2-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)	NEC 瑞萨	NEC
2SK3113B-ZK-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o	RENESAS 瑞萨	RENESAS
2SK3113-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0	NEC 瑞萨	NEC
2SK3113-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(	RENESAS 瑞萨	RENESAS
2SK3114	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. 1. Low on-state resistance: RDS(on)= 2.2 ΩMAX. (VGS= 10 V, ID= 2.0 A) 2. L	NEC 瑞萨	NEC
2SK3114	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state	RENESAS 瑞萨	RENESAS
2SK3114B	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3114B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS	RENESAS 瑞萨	RENESAS
2SK3114B-S17-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3114B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS	RENESAS 瑞萨	RENESAS
2SK3115	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. Features • Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10	NEC 瑞萨	NEC
2SK3115	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low gate charge	RENESAS 瑞萨	RENESAS
2SK3115B	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 21 nC	RENESAS 瑞萨	RENESAS
2SK3115B-S17-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 21 nC	RENESAS 瑞萨	RENESAS
2SK3116	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG = 26 nC T	RENESAS 瑞萨	RENESAS
2SK3116	MOS Field Effect Transistor Features Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) Gate voltage rating ±30 V Low on-state resistance RDS(on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.75 A) Avalanche capability ratings	KEXIN 科信电子	KEXIN
2SK3116	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG= 26 nC TYP. (ID= 7.5 A, VDD= 450 V,	NEC 瑞萨	NEC
2SK3116B	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 22 nC	RENESAS 瑞萨	RENESAS
2SK3116B-S19-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 22 nC	RENESAS 瑞萨	RENESAS
2SK3116B-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 22 nC	RENESAS 瑞萨	RENESAS
2SK3116-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG = 26 nC T	RENESAS 瑞萨	RENESAS
2SK3116-S	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG= 26 nC TYP. (ID= 7.5 A, VDD= 450 V,	NEC 瑞萨	NEC
2SK3116-ZJ	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG= 26 nC TYP. (ID= 7.5 A, VDD= 450 V,	NEC 瑞萨	NEC
2SK3116-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG = 26 nC T	RENESAS 瑞萨	RENESAS
2SK3117	N CHANNEL MOS TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) Chopper Regulator DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 0.21 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 17 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDSS = 500 V) ● Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID =	TOSHIBA 东芝	TOSHIBA
2SK3119	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive.	SANYO 三洋	SANYO
2SK3111	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESAS 瑞萨	RENESAS
2SK3111	isc N-Channel MOSFET Transistor 文件：333.34 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3111-S	isc N-Channel MOSFET Transistor 文件：327.26 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3111-ZJ	isc N-Channel MOSFET Transistor 文件：401.55 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3112	isc N-Channel MOSFET Transistor 文件：332.05 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3112-S	isc N-Channel MOSFET Transistor 文件：326.12 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3112-ZJ	isc N-Channel MOSFET Transistor 文件：400.41 Kbytes Page：2 Pages	ISC 无锡固电	ISC

2SK311产品属性

类型
描述
型号
2SK311
制造商
HITACHI
制造商全称
Hitachi Semiconductor
功能描述
SILICON N-CHANNEL MOS FET(HIGH SPEED POWER SWITCHING)

2SK311供应商更多...

更新时间：2025-12-25 15:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	2SK3119-TD-E	SANYO/三洋	2025+	SOT89	5000	原装进口价格优请找坤融电子!	询价
柒号芯城电子商务(深圳)有限公司	2SK3113B-ZK-E1-AY	RENESAS	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市高捷芯城科技有限公司	2SK3114B-S17-AY	Renesas(瑞萨)	24+	标准封装	17048	支持大陆交货,美金交易。原装现货库存。	询价
深圳市卓越微芯电子有限公司	2SK3114B-S17-AY	RENESAS/瑞萨	25+		9500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市华斯顿科技有限公司	2SK311	HITACHI	25+23+	TO220	11310	绝对原装正品全新进口深圳现货	询价
贸泽芯城（深圳）电子科技有限公司	2SK311	HITACHI/日立	23+	TO-220	36788	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市赛美科科技有限公司	2SK311	HITACHI		TO220	9850	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市明嘉莱科技有限公司	2SK311	HITACHI/日立	24+	TO 220	158293	明嘉莱只做原装正品现货	询价
深圳市一线半导体有限公司	2SK311	ROHM	24+		60000		询价
深圳市中飞凌科技有限公司	2SK3115B	RENESAS	26+	TO-220F	360000	进口原装现货	询价

2SK311芯片相关品牌

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2SK311数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-27
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-24
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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2SK311价格

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2SK311参数引脚图相关

2SK311数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商

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2SK3105-T1B-A找代理商上深圳百域芯科技

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

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