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2SK311价格
参考价格：￥1.6900
型号：2SK3113-Z-E2 品牌：NEC 备注：这里有2SK311多少钱，2024年最近7天走势，今日出价，今日竞价，2SK311批发/采购报价，2SK311行情走势销售排行榜，2SK311报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK311 | SILICONN-CHANNELMOSFET(HIGHSPEEDPOWERSWITCHING) HIGHSPEEDPOWERSWITCHING Complementarypairwith2SJ117 | HitachiHitachi, Ltd. 日立公司 |  |   |
2SK311 | DrainCurrent?밒D=3A@TC=25C 文件：65.57 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3110isNchannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevoltagerating±30V •Lowon-stateresistance RDS(on) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3110isNchannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasDC/DC converter,actuatordriver. FEATURES •Gatevol | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3111isNchannelMOSFETdevicethat featuresalowon-stateresistanceandexcellent switchingcharacteristics,anddesignedforhighvoltage applicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3111isNchannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevoltagerating±30V •Lowon-stateresistance RDS(on) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features ●Gatevoltagerating±30V ●Lowon-stateresistance RDS(on)=180mΩMAX.(VGS=10V,ID=10A) ●Lowinputcapacitance Ciss=1000pFTYP.(VDS=10V,VGS=0V) ●Avalanchecapabilityrated ●Built-ingateprotectiondiode ●Surfacemountdeviceavailable | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3111isNchannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevoltagerating±30V •Lowon-stateresistance RDS(on) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3111isNchannelMOSFETdevicethat featuresalowon-stateresistanceandexcellent switchingcharacteristics,anddesignedforhighvoltage applicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3111isNchannelMOSFETdevicethat featuresalowon-stateresistanceandexcellent switchingcharacteristics,anddesignedforhighvoltage applicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3111isNchannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevoltagerating±30V •Lowon-stateresistance RDS(on) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3112isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevoltagerating±30V •Lowon-stateresistanceRDS(on)=110 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features ●Gatevoltagerating30V ●Lowon-stateresistanceRDS(on)=110mMAX.(VGS=10V,ID=13A) ●LowinputcapacitanceCiss=1600pFTYP.(VDS=10V,VGS=0V) ●Avalanchecapabilityrated ●Built-ingateprotectiondiode ●Surfacemountdeviceavailable | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3112isN-channelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasDC/DC converter,actuatordriver. FEATURES •Gatevo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3112isN-channelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasDC/DC converter,actuatordriver. FEATURES •Gatevo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3112isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevoltagerating±30V •Lowon-stateresistanceRDS(on)=110 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3112isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter,actuatordriver. FEATURES •Gatevoltagerating±30V •Lowon-stateresistanceRDS(on)=110 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3112isN-channelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, anddesignedforhighvoltageapplicationssuchasDC/DC converter,actuatordriver. FEATURES •Gatevo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristic,and designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES •Lowon-stateresistance RDS( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features Lowon-stateresistanceRDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) Lowgatecharge QG=9nCTYP.(VDD=450V,VGS=10V,ID=2.0A) Gatevoltagerating±30V Avalanchecapabilityratings | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristic,and designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES •Lowon-stateresistance RDS( | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE The2SK3114isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. 1.Lowon-stateresistance:RDS(on)=2.2ΩMAX.(VGS=10V,ID=2.0A) 2.L | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3114isN-channelDMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowon-state | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3114BisN-channelMOSFETdevicethatfeaturesalow gatechargeandexcellentswitchingcharacteristics,anddesigned forhighvoltageapplicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowon-stateresistance RDS | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3114BisN-channelMOSFETdevicethatfeaturesalow gatechargeandexcellentswitchingcharacteristics,anddesigned forhighvoltageapplicationssuchasswitchingpowersupply,AC adapter. FEATURES •Lowon-stateresistance RDS | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3115isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingharacteristics,and designedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES ·Lowgatecharge | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE Description The2SK3115isN-ChannelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. Features •Lowgatecharge QG=26nCTYP.(VDD=450V,VGS=10 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3115BisN-ChannelMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowgatecharge QG=21nC | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3115BisN-ChannelMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowgatecharge QG=21nC | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3116isN-channelDMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowgatecharge QG=26nCT | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3116isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=26nCTYP.(ID=7.5A,VDD=450V, | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features Lowgatecharge QG=26nCTYP.(ID=7.5A,VDD=450V,VGS=10V) Gatevoltagerating±30V Lowon-stateresistance RDS(on)=1.2ΩMAX.(VGS=10V,ID=3.75A) Avalanchecapabilityratings | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3116BisN-channelMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowgatecharge QG=22nC | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3116BisN-channelMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowgatecharge QG=22nC | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3116BisN-channelMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowgatecharge QG=22nC | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3116isN-channelDMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowgatecharge QG=26nCT | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3116isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=26nCTYP.(ID=7.5A,VDD=450V, | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3116isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowgatecharge QG=26nCTYP.(ID=7.5A,VDD=450V, | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3116isN-channelDMOSFETdevicethatfeaturesa lowgatechargeandexcellentswitchingcharacteristics,and designedforhighvoltageapplicationssuchasswitchingpower supply,ACadapter. FEATURES •Lowgatecharge QG=26nCT | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NCHANNELMOSTYPE(LOWNOISEPRE-AMPLIFIER,TONECONTROLAMPLIFIERANDDC-ACHIGHINPUTIMPEDANCEAMPLIFIERCIRCUITAPPLICATIONS) ChopperRegulatorDC−DCConverterandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=0.21Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=17S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDSS=500V) ●Enhancementmode:Vth=2.0~4.0V(VDS=10V,ID= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features ·LowONresistance. ·Ultrahigh-speedswitching. ·2.5Vdrive. | SANYOSanyo 三洋三洋电机株式会社 |  | | |
iscN-ChannelMOSFETTransistor 文件：333.34 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：327.26 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：401.55 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：332.05 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：326.12 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：400.41 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：398.81 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SK311产品属性
- 类型
描述
- 型号
2SK311
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
SILICON N-CHANNEL MOS FET(HIGH SPEED POWER SWITCHING)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
14+11+10+ |
SOT89 |
4000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2016+ |
TO-220F |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
2020+ |
TO263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA/东芝 |
23+ |
NA/ |
4430 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
24+ |
TO220F |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NEC |
23+ |
TO220 |
20000 |
原厂原装正品现货 |
|||
RENESAS(瑞萨)/IDT |
23+ |
6000 |
诚信服务，绝对原装原盘 |
||||
NEC |
221 |
17+ |
1 |
盘 |
|||
RENESAS/瑞萨器场效应管 |
24+23+ |
TO-252 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
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- 2SK3230
- 2SK322WR
- 2SK3225(1)-Z-E1
- 2SK321-R
- 2SK3210
- 2SK320200L
- 2SK316-Q
- 2SK3131
- 2SK3130
- 2SK3129
- 2SK3128
- 2SK3127
- 2SK3126
- 2SK3125
- 2SK3124
- 2SK3122
- 2SK3121
- 2SK3120
- 2SK3119
- 2SK3117
- 2SK3116
- 2SK3115
- 2SK3114
- 2SK3113-Z-E2
- 2SK3113
- 2SK3112
- 2SK3111
- 2SK3110
- 2SK3109
- 2SK3108
- 2SK3107
- 2SK3105
- 2SK3101
- 2SK310
- 2SK30AW
- 2SK30A
- 2SK3098
- 2SK3096
- 2SK3094
- 2SK3092
- 2SK3090
- 2SK3089
- 2SK3085
- 2SK3084
- 2SK3082
- 2SK3081
- 2SK3080
- 2SK3079ATE12LQ
- 2SK3078A(TE12L,F)
- 2SK3078
- 2SK3075(TE12L,Q)
- 2SK3074TE12LF
- 2SK3074
- 2SK3072
- 2SK3065T100
- 2SK3065
- 2SK3064GOLSO
- 2SK3064G0L
- 2SK306400L
- 2SK3064
- 2SK3054
- 2SK3048
- 2SK3046
- 2SK3045
- 2SK3043
- 2SK303100L
2SK311数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
2021-6-242SK508G-K51-AE3-R
属性参数值 商品目录结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C时）50mA 漏源电压（Vdss）15V 类型N沟道 最大功率耗散（Ta=25°C）200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
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