SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3113 is N-channel DMOS FET device that features

a low gate charge and excellent switching characteristic, and

designed for high voltage applications such as switching

power supply, AC adapter.

FEATURES

• Low on-state resistance

RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)

• Low gate charge

QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)

• Gate voltage rating ±30 V

• Avalanche capability ratings