2SK3113价格

参考价格:¥1.6900

型号:2SK3113-Z-E2 品牌:NEC 备注:这里有2SK3113多少钱,2025年最近7天走势,今日出价,今日竞价,2SK3113批发/采购报价,2SK3113行情走势销售排行榜,2SK3113报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK3113

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0

NEC

瑞萨

2SK3113

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)=4.4Ω MAX. (VGS=10V,ID=1.0A) Low gate charge QG= 9 nC TYP. (VDD=450V,VGS=10V,ID=2.0A) Gate voltage rating ±30V Avalanche capability ratings

KEXIN

科信电子

2SK3113

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(

RENESAS

瑞萨

2SK3113

isc N-Channel MOSFET Transistor

文件:398.81 Kbytes Page:2 Pages

ISC

无锡固电

2SK3113

SWITCHING N-CHANNEL POWER MOS FET

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

NEC

瑞萨

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

RENESAS

瑞萨

Power MOSFET

文件:1.07641 Mbytes Page:9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:331.26 Kbytes Page:2 Pages

ISC

无锡固电

2SK3113产品属性

  • 类型

    描述

  • 型号

    2SK3113

  • 制造商

    Renesas Electronics Corporation

更新时间:2025-11-19 10:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
18+
TO-252
85600
保证进口原装可开17%增值税发票
NEC
25+
TO-252
860000
明嘉莱只做原装正品现货
NEC
24+
SOT-252
5000
全现原装公司现货
NEC
24+
TO252
22055
郑重承诺只做原装进口现货
NEC
25+
TO-251
30000
代理全新原装现货,价格优势
RENESAS
SOT252
30000000
原装进口中国百强元器件分销企业 专注RENESAS十年 公司大量RENESAS现货 欢迎您的咨询 百年不变 服务至上
NEC
24+
6540
原装现货/欢迎来电咨询
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
NEC
2022+
SOT252
4000
原厂代理 终端免费提供样品
NEC
25+
TO-252
8880
原装认准芯泽盛世!

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