SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3116B is N-channel MOS FET device that features a

low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power

supply, AC adapter.

FEATURES

• Low gate charge

QG = 22 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)

• Gate voltage rating : ±30 V

• Low on-state resistance

RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A)

• Avalanche capability ratings